Inventor profile of:

Rajesh Kumar Malhan

City:

Nagoya

Country:

Japan

Published Applications:

14

Last publication date:

2012-04-05

Top Assignees for applications by Rajesh Kumar Malhan

The entities that hold a legal rights for patent applications filed by inventor Malhan Rajesh Kumar:

Recent patent applications by Malhan Rajesh Kumar

Rajesh Kumar Malhan from Nagoya, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-04-05
US20120080728A1
Electricity

Semiconductor device with junction field-effect transistor and manufacturing method of the same

#2 | 2011-10-20
US20110254177A1
Electricity

Power electronic package having two substrates with multiple semiconductor chips and electronic components

#3 | 2011-08-18
US20110198612A1
Electricity

SiC semiconductor device having CJFET and method for manufacturing the same

#4 | 2011-06-30
US20110156054A1
Electricity

Silicon carbide semiconductor device and method of manufacturing the same

#5 | 2011-06-30
US20110156053A1
Electricity

Semiconductor device having D mode JFET and E mode JFET and method for manufacturing the same

#6 | 2011-06-09
US20110133211A1
Electricity

Semiconductor device and method of manufacturing the same

#7 | 2011-01-06
US20110002083A1
Electricity

Ceramic material and electronic device

#8 | 2010-02-04
US20100025693A1
Electricity

Wide band gap semiconductor device including junction field effect transistor

#9 | 2008-03-06
US20080054439A1
Electricity

Power electronic package having two substrates with multiple semiconductor chips and electronic components

#10 | 2007-09-27
US20070221924A1
Electricity

Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first groove

#11 | 2006-09-14
US20060205195A1
Electricity

Method of forming an ohmic contact in wide band semiconductor

#12 | 2006-04-13
US20060076613A1
Electricity

Semiconductor device including a vertical field effect transistor, having trenches, and a diode

#13 | 2006-03-23
US20060060884A1
Electricity

Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each groove

#14 | 2005-10-20
US20050233539A1
Electricity

Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate

InventorID:

4492971 ⎘