Inventor profile of:

Mrinal K. Das

City:

Durham, North Carolina

Country:

United States

Published Applications:

16

Last publication date:

2017-07-27

Top Assignees for applications by Mrinal K. Das

The entities that hold a legal rights for patent applications filed by inventor Das Mrinal K.:

Recent patent applications by Das Mrinal K.

Mrinal K. Das from Durham, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2017-07-27
US20170213811A1
Electricity

Low switching loss high performance power module

#2 | 2015-01-29
US20150028354A1
Electricity

Silicon carbide devices having smooth channels

#3 | 2013-09-26
US20130248883A1
Electricity

High performance power module

#4 | 2012-09-13
US20120228638A1
Electricity

Methods of fabricating silicon carbide devices having smooth channels

#5 | 2010-12-23
US20100320477A1
Chemistry; metallurgy

Process for producing silicon carbide crystals having increased minority carrier lifetimes

#6 | 2010-09-02
US20100221924A1
Electricity

Methods of forming SiC MOSFETs with high inversion layer mobility

#7 | 2010-01-14
US20100009545A1
Electricity

Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen

#8 | 2009-10-22
US20090261351A1
Electricity

Silicon carbide devices having smooth channels

#9 | 2009-01-01
US20090004883A1
Electricity

Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen

#10 | 2008-09-25
US20080233285A1
Electricity

Methods of forming SiC MOSFETs with high inversion layer mobility

#11 | 2006-11-30
US20060270103A1
Electricity

Methods of fabricating silicon carbide devices having smooth channels

#12 | 2006-11-23
US20060261348A1
Electricity

High voltage silicon carbide devices having bi-directional blocking capabilities

#13 | 2006-11-23
US20060261347A1
Electricity

High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities

#14 | 2006-11-23
US20060261346A1
Electricity

High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same

#15 | 2006-11-23
US20060261345A1
Electricity

High voltage silicon carbide devices having bi-directional blocking capabilities

#16 | 2006-06-22
US20060130742A1
Chemistry; metallurgy

Process for producing silicon carbide crystals having increased minority carrier lifetimes

InventorID:

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