Murray, Utah
United States
17
2013-09-26
The entities that hold a legal rights for patent applications filed by inventor MARCHANT Bruce D.:
Bruce D. MARCHANT from Murray, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Trench-gate field effect transistor
#2 | 2012-08-30Methods related to power semiconductor devices with thick bottom oxide layers
#3 | 2012-05-03Structure and method for forming trench-gate field effect transistor with source plug
#4 | 2011-07-21Method of forming trench-gate field effect transistors
#5 | 2011-07-14LDMOS with self aligned vertical LDD backside drain
#6 | 2011-01-20Method of forming a dual-trench field effect transistor
#7 | 2010-12-16Lateral drain MOSFET with improved clamping voltage control
#8 | 2010-10-21LDMOS with self aligned vertical LDD backside drain
#9 | 2010-10-14Trench-gate field effect transistor with channel enhancement region and methods of forming the same
#10 | 2010-07-15Lateral drain MOSFET with improved clamping voltage control
#11 | 2009-09-17Trench-Gate Field Effect Transistors and Methods of Forming the Same
#12 | 2008-07-10Method of forming trench gate FETs with reduced gate to drain charge
#13 | 2008-06-12Methods of making power semiconductor devices with thick bottom oxide layer
#14 | 2006-12-07Trench-gate field effect transistors and methods of forming the same
#15 | 2006-10-26Trench gate FETs with reduced gate to drain charge
#16 | 2005-08-04Power semiconductor devices and methods of manufacture
#17 | 2005-02-10Structure and method of forming a dual-trench field effect transistor
451690 ⎘