GOLETA, California
United States
23
2019-05-30
The entities that hold a legal rights for patent applications filed by inventor KAMBER DERRICK S.:
DERRICK S. KAMBER from GOLETA, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Method and system for preparing polycrystalline group III metal nitride
#2 | 2019-01-03Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
#3 | 2018-12-27METHOD AND SYSTEM FOR PREPARING POLYCRYSTALLINE GROUP III METAL NITRIDE
#4 | 2018-07-24Capsule for high pressure, high temperature processing of materials and methods of use
#5 | 2017-05-16Large area seed crystal for ammonothermal crystal growth and method of making
#6 | 2016-08-04Method and system for preparing polycrystalline group III metal nitride
#7 | 2015-05-14Process for large-scale ammonothermal manufacturing of gallium nitride boules
#8 | 2014-05-29High quality group-III metal nitride crystals, methods of making, and methods of use
#9 | 2013-12-26USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
#10 | 2013-09-26Polycrystalline group III metal nitride with getter and method of making
#11 | 2011-12-08GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED PURITY AND METHOD OF PRODUCING THE SAME
#12 | 2011-10-27Ammonothermal method for growth of bulk gallium nitride
#13 | 2011-09-15Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals
#14 | 2011-09-15Reactor designs for use in ammonothermal growth of group-III nitride crystals
#15 | 2011-09-01ADDITION OF HYDROGEN AND/OR NITROGEN CONTAINING COMPOUNDS TO THE NITROGEN-CONTAINING SOLVENT USED DURING THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
#16 | 2011-09-01CONTROLLING RELATIVE GROWTH RATES OF DIFFERENT EXPOSED CRYSTALLOGRAPHIC FACETS OF A GROUP-III NITRIDE CRYSTAL DURING THE AMMONOTHERMAL GROWTH OF A GROUP-III NITRIDE CRYSTAL
#17 | 2011-08-25NOVEL VESSEL DESIGNS AND RELATIVE PLACEMENTS OF THE SOURCE MATERIAL AND SEED CRYSTALS WITH RESPECT TO THE VESSEL FOR THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
#18 | 2010-07-29Large-area bulk gallium nitride wafer and method of manufacture
#19 | 2010-05-06GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED CRYSTAL QUALITY GROWN ON AN ETCHED-BACK SEED CRYSTAL AND METHOD OF PRODUCING THE SAME
#20 | 2010-03-25Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
#21 | 2010-03-18GROWTH AND MANUFACTURE OF REDUCED DISLOCATION DENSITY AND FREE-STANDING ALUMINUM NITRIDE FILMS BY HYDRIDE VAPOR PHASE EPITAXY
#22 | 2009-12-03Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same
#23 | 2008-04-10Method and materials for growing III-nitride semiconductor compounds containing aluminum
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