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Inventor profile of:

Jia-Wei Yang

City:

Hsinchu

Country:

Taiwan

Published Applications:

6

Last publication date:

2006-10-05

Top Assignees for applications by Jia-Wei Yang

The entities that hold a legal rights for patent applications filed by inventor Yang Jia-Wei:

  • VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION 4 HSINCHU, Taiwan
  • Vanguard International Semiconductor Corporatio 1 Hsinchu, Taiwan

Recent patent applications by Yang Jia-Wei

Jia-Wei Yang from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2006-10-05
US20060220117A1
Electricity

Structure for an LDMOS transistor and fabrication method thereof

#2 | 2006-07-11
US10428940
-

Structure for an LDMOS transistor and fabrication method for thereof

#3 | 2006-05-09
US10793773
-

Fabrication method for a deep trench isolation structure of a high-voltage device

#4 | 2006-02-09
US20060027890A1
Electricity

Deep trench isolation structure of a high-voltage device and method for forming thereof

#5 | 2005-12-06
US10354130
-

Deep trench isolation structure of a high-voltage device and method for forming thereof

#6 | 2005-09-15
US20050202638A1
Electricity

Method of reducing step height

InventorID:

4566975 ⎘

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