Yuichi Oshima

City:

Tokyo

Country:

Japan

Published Applications:

Last publication date:

2006-10-10

Top Assignees for applications by Yuichi Oshima

The entities that hold a legal rights for patent applications filed by inventor Oshima Yuichi:

Yuichi Oshima from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate

Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method

Nitride semiconductor substrate and its production method

InventorID:

4581615 ⎘