🔗 Permalink

Inventor profile of:

Armin Dadgar

City:

Berlin

Country:

Germany

Published Applications:

Last publication date:

2023-05-04

Top Assignees for applications by Armin Dadgar

The entities that hold a legal rights for patent applications filed by inventor Dadgar Armin:

AZUR SPACE Solar Power GmbH 7 Heilbronn, Germany
ALLOS SEMICONDUCTORS GMBH 3 Dresden, Germany
AZUR SPACE SOLAR POWER GMBH 2 Berlin, Germany
AZZURRO SEMICONDUCTORS AG 2 Magdeburg, Germany
OTTO-VON GUERICKE-UNIVERSITAT MAGDEBURG 2 Magdeburg, Germany
OTTO-VON-GUERICKE-UNIVERSITAET MAGDEBURG 2 Magdeburg, Germany
Aixtron AG 2 , Germany
AZZURO Semiconductors AG 1 Magdeburg, Germany
LayTec Gesellschaft fuer in-situ und Nano-Sensorik mbH 1 Berlin, Germany
LayTec GmbH 1 Berlin, Germany
ALBERT-LUDWIGS-UNIVERSITAT FREIBURG 1 Freiburg, Germany
OSRAM OPTO SEMICONDUCTORS GMBH 1 Regensburg, Germany
LEIBNIZ-INSTITUT FUER NEUROBIOLOGIE MAGDEBURG 1 Magdeburg, Germany

Recent patent applications by Dadgar Armin

Armin Dadgar from Berlin, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-05-04

US20230134459A1

Electricity

Nitride semiconductor component and process for its production

#2 | 2023-02-09

US20230041323A1

Electricity

NITRIDE SEMICONDUCTOR COMPONENT AND PROCESS FOR ITS PRODUCTION

#3 | 2023-02-09

US20230039863A1

Electricity

NITRIDE SEMICONDUCTOR COMPONENT AND PROCESS FOR ITS PRODUCTION

#4 | 2023-01-26

US20230028392A1

Electricity

NITRIDE SEMICONDUCTOR COMPONENT AND PROCESS FOR ITS PRODUCTION

#5 | 2022-11-17

US20220368110A1

Electricity

Semiconductor layer stack and method for producing same

#6 | 2021-04-22

US20210119419A1

Electricity

Semiconductor layer stack and method for producing same

#7 | 2019-03-28

US20190091483A1

Human necessities

Micro-electrode array and method for producing a micro-electrode array

#8 | 2018-06-14

US20180166854A1

Electricity

Light-emitting semiconductor device, light-emitting semiconductor component and method for producing a light-emitting semiconductor device

#9 | 2018-05-10

US20180130927A1

Electricity

COMPONENT HAVING A TRANSPARENT CONDUCTIVE NITRIDE LAYER

#10 | 2017-01-26

US20170025564A1

Electricity

Nitride semiconductor component and process for its production

#11 | 2014-01-02

US20140001513A1

Electricity

LAYER SYSTEM OF A SILICON-BASED SUPPORT AND A HETEROSTRUCTURE APPLIED DIRECTLY ONTO THE SUPPORT

#12 | 2013-10-03

US20130256697A1

Electricity

GROUP-III-NITRIDE BASED LAYER STRUCTURE AND SEMICONDUCTOR DEVICE

#13 | 2012-08-30

US20120217617A1

Electricity

Semi-Polar Wurtzite Group III Nitride Based Semiconductor Layers and Semiconductor Components Based Thereon

#14 | 2010-06-03

US20100133658A1

Electricity

NITRIDE SEMICONDUCTOR COMPONENT LAYER STRUCTURE ON A GROUP IV SUBSTRATE SURFACE

#15 | 2010-05-27

US20100127600A1

Electricity

Piezoelectric sensor arrangement comprising a thin layer shear wave resonator based on epitactically grown piezoelectric layers

#16 | 2009-08-13

US20090199763A1

Chemistry; metallurgy

Process for the production of gan or aigan crystals

#17 | 2008-07-03

US20080157123A1

Electricity

Epitaxial group III nitride layer on (001)-oriented group IV semiconductor

#18 | 2008-06-26

US20080150085A1

Electricity

GRUPPE-III-NITRID-HALBLEITERBAUELEMENT MIT HOCH P-LEITFAHIGER SCHICHT

#19 | 2008-03-20

US20080067549A1

Electricity

Semiconductor component

#20 | 2007-08-23

US20070197004A1

Electricity

Nitride semiconductor component and process for its production

#21 | 2007-02-08

US20070030493A1

Physics

Device and method for the measurement of the curvature of a surface

#22 | 2005-02-03

US20050026392A1

Chemistry; metallurgy

Method for depositing III-V semiconductor layers on a non-III-V substrate

#23 | 2005-02-03

US20050025909A1

Electricity

Method for the production of III-V laser components

#24 | 2005-02-03

US20050022725A1

Chemistry; metallurgy

Process for depositing III-V semiconductor layers on a non-III-V substrate

InventorID:

462993 ⎘