Inventor profile of:

Narayan Dass Taneja

City:

Long Beach, California

Country:

United States

Published Applications:

45

Last publication date:

2016-02-25

Top Assignees for applications by Narayan Dass Taneja

The entities that hold a legal rights for patent applications filed by inventor Taneja Narayan Dass:

Recent patent applications by Taneja Narayan Dass

Narayan Dass Taneja from Long Beach, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2016-02-25
US20160056310A1
Electricity

Tetra-lateral position sensing detector

#2 | 2016-02-04
US20160035778A1
Electricity

Thin Active Layer Fishbone Photodiode With A Shallow N+ Layer and Method of Manufacturing the Same

#3 | 2015-11-05
US20150318408A1
Electricity

Edge Illuminated Photodiodes

#4 | 2015-05-21
US20150137302A1
Electricity

High Speed Backside Illuminated, Front Side Contact Photodiode Array

#5 | 2015-01-15
US20150014804A1
Electricity

Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same

#6 | 2014-10-30
US20140319642A1
Electricity

Wavelength sensitive sensor photodiodes

#7 | 2014-10-30
US20140319579A1
Electricity

Tetra-lateral position sensing detector

#8 | 2014-07-24
US20140203386A1
Electricity

Shallow junction photodiode for detecting short wavelength light

#9 | 2014-05-15
US20140131825A1
Electricity

Edge illuminated photodiodes

#10 | 2014-04-03
US20140093994A1
Electricity

Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays

#11 | 2014-03-06
US20140061843A1
Electricity

High speed backside illuminated, front side contact photodiode array

#12 | 2013-10-24
US20130277786A1
Electricity

Photodiode and photodiode array with improved performance characteristics

#13 | 2013-10-03
US20130256750A1
Electricity

Tetra-lateral position sensing detector

#14 | 2012-05-03
US20120104532A1
Electricity

Low crosstalk, front-side illuminated, back-side contact photodiode array

#15 | 2012-04-12
US20120086097A1
Electricity

Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays

#16 | 2012-03-15
US20120061788A1
Electricity

PHOTODIODES WITH PN-JUNCTION ON BOTH FRONT AND BACK SIDES

#17 | 2011-11-17
US20110278690A1
Electricity

High density photodiodes

#18 | 2011-10-13
US20110248369A1
Electricity

Photodiode and photodiode array with improved performance characteristics

#19 | 2011-07-21
US20110175188A1
Electricity

Wavelength sensitive sensor photodiodes

#20 | 2011-07-14
US20110169121A1
Electricity

THIN WAFER DETECTORS WITH IMPROVED RADIATION DAMAGE AND CROSSTALK CHARACTERISTICS

#21 | 2010-12-09
US20100308371A1
Electricity

Tetra-lateral position sensing detector

#22 | 2010-11-18
US20100289105A1
Electricity

Edge illuminated photodiodes

#23 | 2010-10-21
US20100264505A1
Electricity

Photodiodes with PN junction on both front and back sides

#24 | 2010-09-16
US20100230604A1
Electricity

Photodiode and photodiode array with improved performance characteristics

#25 | 2010-08-26
US20100213565A1
Electricity

High speed backside illuminated, front side contact photodiode array

#26 | 2010-07-29
US20100187647A1
Electricity

High density photodiodes

#27 | 2010-06-24
US20100155874A1
Electricity

Front side illuminated, back-side contact double-sided PN-junction photodiode arrays

#28 | 2010-04-08
US20100084730A1
Electricity

Front Illuminated Back Side Contact Thin Wafer Detectors

#29 | 2010-03-18
US20100065939A1
Electricity

Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same

#30 | 2010-03-04
US20100051821A1
Electricity

Photodiode and photodiode array with improved performance characteristics

#31 | 2010-02-11
US20100032710A1
Electricity

Deep diffused thin photodiodes

#32 | 2009-06-04
US20090140366A1
Electricity

Photodiode with controlled current leakage

#33 | 2008-11-13
US20080277753A1
Electricity

Thin active layer fishbone photodiode and method of manufacturing the same

#34 | 2008-06-05
US20080128846A1
Electricity

Thin wafer detectors with improved radiation damage and crosstalk characteristics

#35 | 2008-05-01
US20080099871A1
Electricity

Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays

#36 | 2008-03-20
US20080067622A1
Electricity

High density photodiodes

#37 | 2007-12-27
US20070296005A1
Electricity

Edge illuminated photodiodes

#38 | 2007-12-06
US20070278534A1
Electricity

Low crosstalk, front-side illuminated, back-side contact photodiode array

#39 | 2007-11-08
US20070257329A1
Electricity

Photodiode with controlled current leakage

#40 | 2007-10-09
US11383485
-

Edge illuminated photodiodes

#41 | 2007-07-10
US10838987
-

Thin wafer detectors with improved radiation damage and crosstalk characteristics

#42 | 2007-04-26
US20070090394A1
Electricity

Deep diffused thin photodiodes

#43 | 2006-11-16
US20060255420A1
Electricity

Front illuminated back side contact thin wafer detectors

#44 | 2006-10-05
US20060220078A1
Electricity

Photodiode with controlled current leakage

#45 | 2006-06-06
US10797324
-

Front illuminated back side contact thin wafer detectors

InventorID:

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