Tokyo
Japan
9
2025-12-25
The entities that hold a legal rights for patent applications filed by inventor Ohta Hiroaki:
Hiroaki Ohta from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
Unmanned Aircraft
#2 | 2018-05-31Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction
#3 | 2015-09-10Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction
#4 | 2014-12-25ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS
#5 | 2013-10-03Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
#6 | 2012-06-21OHMIC CATHODE ELECTRODE ON THE BACKSIDE OF NONPOLAR M-PLANE (1-100) AND SEMIPOLAR (20-21) BULK GALLIUM NITRIDE SUBSTRATES
#7 | 2011-10-20III-V nitride-based thermoelectric device
#8 | 2011-10-06Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes
#9 | 2011-09-08Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction
465902 ⎘