San Jose, California
United States
35
2021-05-20
The entities that hold a legal rights for patent applications filed by inventor Allen Robert David:
Robert David Allen from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Porous silicon anode for rechargeable metal halide battery
#2 | 2014-12-04Composite membrane with multi-layered active layer
#3 | 2013-11-07Photo-patternable dielectric materials and formulations and methods of use
#4 | 2013-10-03Photoacid generating polymers containing a urethane linkage for lithography
#5 | 2012-01-19Composite membrane with multi-layered active layer
#6 | 2011-10-20Polyhedral oligomeric silsesquioxane based imprint materials and imprint process using polyhedral oligomeric silsesquioxane based imprint materials
#7 | 2011-05-26Composite membranes with performance enhancing layers
#8 | 2011-05-26Polymeric films made from polyhedral oligomeric silsesquioxane (POSS) and a hydrophilic comonomer
#9 | 2011-03-03Photo-patternable dielectric materials and formulations and methods of use
#10 | 2011-01-13Low activation energy photoresist composition and process for its use
#11 | 2010-08-26INTERFACIAL POLYMERIZATION METHODS FOR MAKING FLUOROALCOHOL-CONTAINING POLYAMIDES
#12 | 2010-08-26Polyamide membranes with fluoroalcohol functionality
#13 | 2009-01-08Photoresist topcoat for a photolithographic process
#14 | 2008-09-25Negative resists based on acid-catalyzed elimination of polar molecules
#15 | 2008-09-18Photoresist topcoat for a photolithographic process
#16 | 2008-07-10Polyhedral oligomeric silsesquioxane based imprint materials and imprint process using polyhedral oligomeric silsesquioxane based imprint materials
#17 | 2008-06-26Low activation energy dissolution modification agents for photoresist applications
#18 | 2008-01-31Immersion topcoat materials with improved performance
#19 | 2007-11-29Low activation energy photoresist composition and process for its use
#20 | 2007-11-08Negative resists based on acid-catalyzed elimination of polar molecules
#21 | 2007-11-01Topcoat material and use thereof in immersion lithography processes
#22 | 2007-11-01High contact angle topcoat material and use thereof in lithography process
#23 | 2007-11-01Self-topcoating resist for photolithography
#24 | 2007-10-11Imprint process using polyhedral oligomeric silsesquioxane based imprint materials
#25 | 2007-10-04Low activation energy dissolution modification agents for photoresist applications
#26 | 2007-08-30Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions
#27 | 2007-08-28Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions
#28 | 2007-02-01Negative resists based on a acid-catalyzed elimination of polar molecules
#29 | 2006-08-24Photoresist topcoat for a photolithographic process
#30 | 2006-08-24Immersion topcoat materials with improved performance
#31 | 2006-06-15Photoresist composition
#32 | 2005-06-09Low activation energy photoresists
#33 | 2005-06-09Method for patterning a low activation energy photoresist
#34 | 2005-05-26Molecular photoresists containing nonpolymeric silsesquioxanes
#35 | 2005-01-27Photoresist composition
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