Manfred Horstmann

Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor device

Method of forming different silicide portions on different silicon-containing regions in a semiconductor device

Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device

Semiconductor device having T-shaped gate structure comprising in situ sidewall spacers and method of forming the semiconductor device

Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device

Method of removing features using an improved removal process in the fabrication of a semiconductor device

Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device

Semiconductor device having a retrograde dopant profile in a channel region

Drain/source extension structure of a field effect transistor including doped high-k sidewall spacers

Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same

SOI field effect transistor element having a recombination region and method of forming same

Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layer

Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device

Circuit element having a metal silicide region thermally stabilized by a barrier diffusion material