Inventor profile of:

Xiaolong Chen

City:

Beijing

Country:

China

Published Applications:

17

Last publication date:

2026-06-11

Top Assignees for applications by Xiaolong Chen

The entities that hold a legal rights for patent applications filed by inventor Chen Xiaolong:

Recent patent applications by Chen Xiaolong

Xiaolong Chen from Beijing, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-11
US20260159989A1
Chemistry; metallurgy

METHOD FOR PREPARING 3C-SIC SINGLE CRYSTAL

#2 | 2026-04-23
US20260112327A1
Physics

Display Panel and Display Module

#3 | 2026-01-15
US20260018105A1
Physics

DRIVER MODULE AND DISPLAY DEVICE

#4 | 2025-04-17
US20250124843A1
Physics

DRIVER MODULE AND DISPLAY DEVICE

#5 | 2025-03-20
US20250098304A1
Electricity

DISPLAY SUBSTRATE, MANUFACTURING METHOD AND DISPLAY DEVICE

#6 | 2024-08-01
US20240258326A1
Electricity

DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

#7 | 2022-10-06
US20220320855A1
Electricity

Driving circuit, array substrate and display apparatus

#8 | 2022-02-03
US20220032494A1
Performing operations; transporting

FORMALDEHYDE-FREE MEDIUM-HIGH-DENSITY BOARD CAPABLE OF MEETING DEEP FACING REQUIREMENTS AND METHOD FOR MANUFACTURING SAME

#9 | 2019-12-05
US20190369357A1
Physics

Methods and devices for adjusting lens position

#10 | 2019-09-26
US20190297262A1
Electricity

Focusing method, device and storage medium

#11 | 2019-05-23
US20190156539A1
Physics

Hazard point marking method and system

#12 | 2016-05-05
US20160127638A1
Electricity

Shooting parameter adjustment method and device

#13 | 2016-02-18
US20160050352A1
Electricity

Method and device for time-delay photographing

#14 | 2015-10-29
US20150312458A1
Electricity

Method and device for configuring photographing parameters

#15 | 2015-03-26
US20150085349A1
Physics

Nonlinear optical device manufactured with 4H silicon carbide crystal

#16 | 2013-11-28
US20130313575A1
Electricity

Semi-insulating silicon carbide monocrystal and method of growing the same

#17 | 2013-10-17
US20130269598A1
Chemistry; metallurgy

Process for growing silicon carbide single crystal by physical vapor transport method and annealing silicon carbide single crystal in situ

InventorID:

481409 ⎘