Steven P. DenBaars

METHODS FOR FABRICATING A VERTICAL CAVITY SURFACE EMITTING LASER

LIGHT EMITTING DIODES CONTAINING EPITAXIAL LIGHT CONTROL FEATURES

MONOLITHIC, CASCADED, MULTIPLE COLOR LIGHT-EMITTING DIODES WITH INDEPENDENT JUNCTION CONTROL

III-V, II-VI IN-SITU COMPLIANT SUBSTRATE FORMATION

III-NITRIDE-BASED DEVICES GROWN ON A THIN TEMPLATE ON THERMALLY-DECOMPOSED MATERIAL

FABRICATION METHOD FOR SMALL SIZE LIGHT EMITING DIODES ON HIGH-QUALITY EPITAXIAL CRYSTAL LAYERS

METHOD TO IMPROVE THE PERFORMANCE OF GALLIUM-CONTAINING MICRON-SIZED LIGHT-EMITTING DEVICES

NITRIDE BASED ULTRAVIOLET LIGHT EMITTING DIODE WITH AN ULTRAVIOLET TRANSPARENT CONTACT

ACTIVATION OF P-TYPE LAYERS OF TUNNEL JUNCTIONS

FULLY TRANSPARENT ULTRAVIOLET OR FAR-ULTRAVIOLET LIGHT-EMITTING DIODES

METHOD TO IMPROVE THE PERFORMANCE OF GALLIUM-CONTAINING LIGHT-EMITTING DEVICES

III-NITRIDE LED WITH UV EMISSION BY AUGER CARRIER INJECTION

GROUP III-N LIGHT EMITTER ELECTRICALLY INJECTED BY HOT CARRIERS FROM AUGER RECOMBINATION

FORMATION OF MICROLED MESA STRUCTURES WITH ATOMIC LAYER DEPOSITION PASSIVATED SIDEWALLS, A SELF-ALIGNED DIELECTRIC VIA TO THE TOP ELECTRICAL CONTACT, AND A PLASMA-DAMAGE-FREE TOP CONTACT

III-NITRIDE-BASED VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) CONFIGURATIONS

HYBRID GROWTH METHOD FOR III-NITRIDE TUNNEL JUNCTION DEVICES

WAFER BONDING FOR EMBEDDING ACTIVE REGIONS WITH RELAXED NANOFEATURES

METAL ORGANIC CHEMICAL VAPOR DEPOSTION (MOCVD) TUNNEL JUNCTION GROWTH IN III-NITRIDE DEVICES

MICRO-LEDS WITH ULTRA-LOW LEAKAGE CURRENT

REDUCTION IN LEAKAGE CURRENT AND INCREASE IN EFFICIENCY OF III-NITRIDE LEDS BY SIDEWALL PASSIVATION USING ATOMIC LAYER DEPOSITION

Contact architectures for tunnel junction devices

III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers

III-nitride surface-emitting laser and method of fabrication

Method for processing of semiconductor films with reduced evaporation and degradation

Transparent light emitting device with light emitting diodes

Filament LED light bulb

Transparent light emitting device with light emitting diodes

High intensity solid state white emitter which is laser driven and uses single crystal, ceramic or polycrystalline phosphors

Transparent light emitting diodes

TRANSPARENT LIGHT EMITTING DIODES

Ce:YAG/A1Ocomposites for laser-excited solid-state white lighting

Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nitride devices

Methods for fabricating III-nitride tunnel junction devices

III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent

Hybrid growth method for III-nitride tunnel junction devices

III-nitride tunnel junction with modified P-N interface

Multistep deposition of zinc oxide on gallium nitride

Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

PLANAR NONPOLAR GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES

III-V MICRO-LED ARRAYS AND METHODS FOR PREPARING THE SAME

Laser-driven white lighting system for high-brightness applications

Multistep deposition of zinc oxide on gallium nitride

Method for the reuse of gallium nitride epitaxial substrates

Planar nonpolar group-III nitride films grown on miscut substrates

Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser

Lighting emitting diode with light extracted from front and back sides of a lead frame

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

Optical designs for high-efficacy white-light emitting diodes

Non-polar (Al,B,In,Ga)N quantum wells

High power blue-violet III-nitride semipolar laser diodes

Method for the reuse of gallium nitride epitaxial substrates

Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction

HIGH-POWER, LASER-DRIVEN, WHITE LIGHT SOURCE USING ONE OR MORE PHOSPHORS

(Al, In, Ga, B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE

Tunable white light based on polarization sensitive light-emitting diodes

Method for the reuse of gallium nitride epitaxial substrates

Laser-driven white lighting system for high-brightness applications

Textured phosphor conversion layer light emitting diode

ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS

Transparent light emitting diodes

High light extraction efficiency nitride based light emitting diode by surface roughening

ENHANCEMENT OF THERMOELECTRIC PROPERTIES THROUGH POLARIZATION ENGINEERING

METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga,Al,In,B)N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES

(Al,Ga,In)N diode laser fabricated at reduced temperature

Planar nonpolar group-III nitride films grown on miscut substrates

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

METHOD FOR CONDUCTIVITY CONTROL OF (Al,In,Ga,B)N

MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE

PEC ETCHING OF (20-2-1) SEMIPOLAR GALLIUM NITRIDE FOR EXTERNAL EFFICIENCY ENHANCEMENT IN LIGHT EMITTING DIODE APPLICATIONS

ROUGHENED HIGH REFRACTIVE INDEX LAYER/LED FOR HIGH LIGHT EXTRACTION

LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES

Planar nonpolar group-III nitride films grown on miscut substrates

(In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers

(Al,In,B,Ga)N BASED SEMIPOLAR AND NONPOLAR LASER DIODES WITH POLISHED FACETS

White light source employing a III-nitride based laser diode pumping a phosphor

HIGH BRIGHTNESS LIGHT EMITTING DIODE COVERED BY ZINC OXIDE LAYERS ON MULTIPLE SURFACES GROWN IN LOW TEMPERATURE AQUEOUS SOLUTION

Optical designs for high-efficacy white-light emitting diodes

Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser

LED with surface roughening

Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays

LIGHT-EMITTING DIODES WITH LOW TEMPERATURE DEPENDENCE

HIGH OUTPUT POWER, HIGH EFFICIENCY BLUE LIGHT-EMITTING DIODES

Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition

Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations

(Al,Ga,In)N diode laser fabricated at reduced temperature

Method for the reuse of gallium nitride epitaxial substrates

METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION

Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys

HOLE BLOCKING LAYER FOR THE PREVENTION OF HOLE OVERFLOW AND NON-RADIATIVE RECOMBINATION AT DEFECTS OUTSIDE THE ACTIVE REGION

SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)N

Transparent light emitting diodes

HIGH EMISSION POWER AND LOW EFFICIENCY DROOP SEMIPOLAR BLUE LIGHT EMITTING DIODES

Low droop light emitting diode structure on gallium nitride semipolar substrates

Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N

HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE

Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes

(Al, In, Ga, B)N device structures on a patterned substrate

NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES

Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes