Inventor profile of:

Christopher Harris

City:

Taby

Country:

Sweden

Published Applications:

16

Last publication date:

2014-03-06

Top Assignees for applications by Christopher Harris

The entities that hold a legal rights for patent applications filed by inventor Harris Christopher:

Recent patent applications by Harris Christopher

Christopher Harris from Taby, SE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-03-06
US20140065991A1
Electricity

Matching network for transmission circuitry

#2 | 2013-10-17
US20130270577A1
Electricity

Grid-UMOSFET with electric field shielding of gate oxide

#3 | 2012-05-03
US20120105147A1
Electricity

Matching network for transmission circuitry

#4 | 2010-03-11
US20100059850A1
Electricity

Varactor diode with doped voltage blocking layer

#5 | 2010-02-18
US20100041195A1
Electricity

Method of manufacturing silicon carbide self-aligned epitaxial MOSFET for high powered device applications

#6 | 2009-08-20
US20090206347A1
Electricity

Semiconductor device

#7 | 2008-08-28
US20080203398A1
Electricity

Silicon carbide self-aligned epitaxial MOSFET for high powered device applications

#8 | 2007-10-18
US20070243674A1
Electricity

Polytype hetero-interface high electron mobility device and method of making

#9 | 2007-08-30
US20070200116A1
Electricity

Silicon carbide dimpled substrate

#10 | 2007-01-25
US20070018171A1
Electricity

Semiconductor device comprising a junction having a plurality of rings

#11 | 2006-12-14
US20060281284A1
Electricity

Method of manufacturing gallium nitride based high-electron mobility devices

#12 | 2006-12-14
US20060281238A1
Electricity

Method of manufacturing an adaptive AIGaN buffer layer

#13 | 2006-12-14
US20060278892A1
Electricity

Gallium nitride based high-electron mobility devices

#14 | 2006-11-09
US20060252212A1
Electricity

Method and device of field effect transistor including a base shorted to a source region

#15 | 2006-10-05
US20060220072A1
Electricity

Vertical junction field effect transistor having an epitaxial gate

#16 | 2006-09-07
US20060199312A1
Electricity

Method of manufacturing a vertical junction field effect transistor having an epitaxial gate

InventorID:

482910 ⎘