Johnathan E. Faltermeier

Replacement metal gate stack for diffusion prevention

Gate structure cut after formation of epitaxial active regions

Replacement metal gate stack for diffusion prevention

Handler wafer removal by use of sacrificial inert layer

Gate structure cut after formation of epitaxial active regions

finFETs containing improved strain benefit and self aligned trench isolation structures

Semiconductor structure having buried conductive elements

Replacement metal gate stack for diffusion prevention

Semiconductor structure having buried conductive elements

Gate structure cut after formation of epitaxial active regions

Uniform finFET gate height

FinFET spacer formation by oriented implantation

Highly scalable trench capacitor

FinFET spacer formation by oriented implantation

Defect Free Si:C Epitaxial Growth

Spacer as hard mask scheme for in-situ doping in CMOS finFETs

Stress enhanced transistor devices and methods of making

Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (SOI) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor

FinFET spacer formation by oriented implantation

DEVICE WITH STRESSED CHANNEL

Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (S0I) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor

Self-aligned contact

Stress enhanced transistor devices and methods of making

Smooth and vertical semiconductor fin structure

Source/drain junction for high performance MOSFET formed by selective EPI process

DRAM having deep trench capacitors with lightly doped buried plates

Providing isolation for wordline passing over deep trench capacitor

METHOD OF FORMING A BOTTLE-SHAPED TRENCH BY ION IMPLANTATION

METHODS FOR FORMING NESTED AND ISOLATED LINES IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR ETCHING METHODS

Trench capacitor with void-free conductor fill