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Inventor profile of:

Weize Chen

City:

Phoenix, Arizona

Country:

United States

Published Applications:

55

Last publication date:

2024-02-08

Top Assignees for applications by Weize Chen

The entities that hold a legal rights for patent applications filed by inventor Chen Weize:

FREESCALE SEMICONDUCTOR, INC 31 Austin, TX United States
NXP USA, INC. 19 AUSTIN, TX United States
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 6 Phoenix, AZ United States
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 2 Scottsdale, AZ United States
Freescale Seminconductor, Inc 1 Austin, TX United States

Recent patent applications by Chen Weize

Weize Chen from Phoenix, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-02-08

US20240047578A1

METHOD OF FORMING A SEMICONDUCTOR DEVICE

#2 | 2022-08-18

US20220262949A1

Semiconductor device

#3 | 2022-08-11

US20220254920A1

Process of forming an electronic device including a non-volatile memory cell

#4 | 2022-06-30

US20220209008A1

Semiconductor device

#5 | 2021-04-22

US20210119059A1

Electronic device including a junction field-effect transistor

#6 | 2019-05-16

US20190148368A1

Isolation structure for semiconductor device having self-biasing buried layer and method therefor

#7 | 2019-02-07

US20190043856A1

Isolation structure for semiconductor device having self-biasing buried layer and method therefor

#8 | 2018-09-13

US20180260014A1

SYSTEMS AND METHODS FOR CONTROLLING MEMORY ARRAY POWER CONSUMPTION

#9 | 2018-03-01

US20180059052A1

METHODS AND SENSOR DEVICES FOR SENSING FLUID PROPERTIES

#10 | 2017-09-28

US20170278937A1

Split gate device with doped region and method therefor

#11 | 2017-05-25

US20170146485A1

Methods and apparatus for an ISFET

#12 | 2017-03-30

US20170092760A1

Semiconductor device with non-isolated power transistor with integrated diode protection

#13 | 2017-01-10

US14928877

Enhanced sensitivity ion sensing devices

#14 | 2016-12-22

US20160370314A1

Protected sensor field effect transistors

#15 | 2016-12-15

US20160365422A1

Integrated circuits devices with counter-doped conductive gates

#16 | 2016-12-08

US20160356740A1

Protected sensor field effect transistors

#17 | 2016-10-11

US14925933

Semiconductor structure having a dual-gate non-volatile memory device and methods for making same

#18 | 2016-09-15

US20160268245A1

Stacked protection devices with overshoot protection and related fabrication methods

#19 | 2016-06-16

US20160172845A1

Semiconductor device and related protection methods

#20 | 2016-06-16

US20160172489A1

Semiconductor device and related fabrication methods

#21 | 2016-05-19

US20160141211A1

Semiconductor device including power and logic devices and related fabrication methods

#22 | 2016-05-05

US20160126327A1

METHOD OF MAKING A SPLIT GATE MEMORY CELL

#23 | 2016-04-28

US20160118495A1

Integrated breakdown protection

#24 | 2016-04-28

US20160118469A1

Integrated circuit devices with counter-doped conductive gates

#25 | 2016-04-07

US20160099349A1

Semiconductor device with non-isolated power transistor with integrated diode protection

#26 | 2016-04-07

US20160099240A1

Integrated electrostatic discharge (ESD) clamping for an LDMOS transistor device having a bipolar transistor

#27 | 2016-01-14

US20160013182A1

Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof

#28 | 2015-12-31

US20150380317A1

Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof

#29 | 2015-12-10

US20150357324A1

Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof

#30 | 2015-11-19

US20150333189A1

Zener diode devices and related fabrication methods

#31 | 2015-11-05

US20150316503A1

Differential pair sensing circuit structures

#32 | 2015-06-18

US20150171018A1

Ion sensitive field effect transistors with protection diodes and methods of their fabrication

#33 | 2015-06-11

US20150162417A1

Zener diode devices and related fabrication methods

#34 | 2015-03-26

US20150085407A1

Stacked protection devices and related fabrication methods

#35 | 2014-12-25

US20140375370A1

Methods and apparatus for an ISFET

#36 | 2014-09-11

US20140252472A1

Semiconductor device with increased safe operating area

#37 | 2014-09-11

US20140252470A1

Semiconductor device with integrated electrostatic discharge (ESD) clamp

#38 | 2014-08-28

US20140242762A1

Method of fabricating a tunable schottky diode with depleted conduction path

#39 | 2014-03-06

US20140061731A1

Tunable schottky diode with depleted conduction path

#40 | 2014-03-06

US20140061715A1

Zener diode device and fabrication

#41 | 2014-01-02

US20140001594A1

Schottky diode with leakage current control structures

#42 | 2014-01-02

US20140001549A1

Semiconductor device and driver circuit with an active device and isolation structure interconnected through a resistor circuit, and method of manufacture thereof

#43 | 2014-01-02

US20140001548A1

Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof

#44 | 2014-01-02

US20140001546A1

SEMICONDUCTOR DEVICE AND DRIVER CIRCUIT WITH A CURRENT CARRYING REGION AND ISOLATION STRUCTURE INTERCONNECTED THROUGH A RESISTOR CIRCUIT, AND METHOD OF MANUFACTURE THEREOF

#45 | 2014-01-02

US20140001477A1

Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof

#46 | 2014-01-02

US20140001473A1

Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof

#47 | 2013-12-26

US20130341717A1

Semiconductor device with floating RESURF region

#48 | 2013-10-17

US20130270635A1

Semiconductor device with false drain

#49 | 2013-10-17

US20130270606A1

Semiconductor device with integrated breakdown protection

#50 | 2011-12-08

US20110299337A1

Methods and apparatus for an ISFET

#51 | 2011-10-27

US20110261500A1

BACK END OF LINE METAL-TO-METAL CAPACITOR STRUCTURES AND RELATED FABRICATION METHODS

#52 | 2009-11-26

US20090290437A1

Circuit for and an electronic device including a nonvolatile memory cell and a process of forming the electronic device

#53 | 2009-10-29

US20090267127A1

Single poly NVM devices and arrays

#54 | 2009-05-21

US20090127587A1

Tunable antifuse elements

#55 | 2006-12-28

US20060292755A1

Tunable antifuse element and method of manufacture

InventorID:

482959 ⎘