Inventor profile of:

Matthias Passlack

City:

Huldenberg

Country:

Belgium

Published Applications:

38

Last publication date:

2024-11-28

Top Assignees for applications by Matthias Passlack

The entities that hold a legal rights for patent applications filed by inventor Passlack Matthias:

Recent patent applications by Passlack Matthias

Matthias Passlack from Huldenberg, BE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-11-28
US20240395818A1
Electricity

Fin-Based Field Effect Transistors

#2 | 2024-10-10
US20240339537A1
Electricity

THIN-SHEET FINFET DEVICE

#3 | 2022-06-02
US20220173102A1
Electricity

Fin-based field effect transistors

#4 | 2021-06-17
US20210184029A1
Electricity

Thin-sheet FinFET device

#5 | 2021-04-22
US20210119131A1
Electricity

Field effect transistor and method of manufacturing the same

#6 | 2021-01-21
US20210020745A1
Electricity

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

#7 | 2020-07-16
US20200227524A1
Electricity

Steep sloped vertical tunnel field-effect transistor

#8 | 2020-04-30
US20200135930A1
Electricity

Crystalline semiconductor layer formed in BEOL processes

#9 | 2020-04-30
US20200135906A1
Electricity

Semiconductor device and manufacturing method thereof

#10 | 2020-04-02
US20200106014A1
Electricity

Wafers for use in aligning nanotubes and methods of making and using the same

#11 | 2020-04-02
US20200105760A1
Electricity

Fin-based field effect transistors

#12 | 2020-03-26
US20200098898A1
Electricity

Method for forming semiconductor structure

#13 | 2020-03-05
US20200075875A1
Electricity

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

#14 | 2020-02-20
US20200058750A1
Electricity

III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof

#15 | 2020-01-02
US20200006542A1
Electricity

Tunnel field-effect transistor with reduced trap-assisted tunneling leakage

#16 | 2020-01-02
US20200006473A1
Electricity

Tunnel field-effect transistor and method for forming the same

#17 | 2019-12-10
US16053617
Electricity

Tunnel field-effect transistor and method for forming the same

#18 | 2019-11-21
US20190355818A1
Electricity

Steep sloped vertical tunnel field-effect transistor

#19 | 2019-08-08
US20190245037A1
Electricity

III-V semiconductor layers, III-V semiconductor device and methods of manufacturing thereof

#20 | 2019-05-30
US20190165149A1
Electricity

Semiconductor device and manufacturing method thereof

#21 | 2018-05-31
US20180151669A1
Electricity

III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof

#22 | 2018-04-19
US20180108747A1
Electricity

III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof

#23 | 2018-01-23
US15360484
Electricity

III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof

#24 | 2017-12-21
US20170365668A1
Electricity

Semiconductor device channel system and method

#25 | 2017-11-02
US20170317206A1
Electricity

Thin-sheet FinFET device

#26 | 2017-07-06
US20170194140A1
Electricity

Nanowire fabrication method and structure thereof

#27 | 2016-08-04
US20160225858A1
Electricity

Semiconductor devices and FinFET devices

#28 | 2016-04-07
US20160099312A1
Electricity

Nanowire fabrication method and structure thereof

#29 | 2015-12-17
US20150364592A1
Electricity

Thin-sheet FinFET device

#30 | 2015-09-10
US20150255545A1
Electricity

Methods of forming semiconductor devices and FinFET devices, and FinFET devices

#31 | 2014-12-04
US20140353771A1
Electricity

Semiconductor dielectric interface and gate stack

#32 | 2014-09-18
US20140264592A1
Electricity

Barrier layer for FinFET channels

#33 | 2014-09-11
US20140252478A1
Electricity

FinFET with channel backside passivation layer device and method

#34 | 2014-08-28
US20140239418A1
Electricity

Semiconductor dielectric interface and gate stack

#35 | 2014-03-27
US20140087550A1
Electricity

Methods of making semiconductor devices with low leakage Schottky contacts

#36 | 2014-03-06
US20140065780A1
Electricity

Split-channel transistor and methods for forming the same

#37 | 2014-01-23
US20140021532A1
Electricity

Vertical tunnel field effect transistor (FET)

#38 | 2013-10-17
US20130270607A1
Electricity

Semiconductor device channel system and method

InventorID:

482963 ⎘