Ossining, New York
United States
20
2018-11-01
The entities that hold a legal rights for patent applications filed by inventor Bayram Can:
Can Bayram from Ossining, US has applied for patents for these inventions. The list has both pending applications and granted patents:
HETERO-INTEGRATION OF III-N MATERIAL ON SILICON
#2 | 2017-03-30Hetero-integration of III-N material on silicon
#3 | 2016-09-29Back contact LED through spalling
#4 | 2016-01-21Hetero-integration of III-N material on silicon
#5 | 2015-11-05Engineered base substrates for releasing III-V epitaxy through spalling
#6 | 2015-06-25Controlled spalling of group III nitrides containing an embedded spall releasing plane
#7 | 2015-06-16Light emitting diodes with via contact scheme
#8 | 2015-05-07SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH NON-CRYSTALLINE WIDE BAND GAP EMITTER
#9 | 2015-03-26GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINATED WAFER AND METHOD OF FORMING THE SAME
#10 | 2015-03-26Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same
#11 | 2015-02-05CURVATURE COMPENSATED SUBSTRATE AND METHOD OF FORMING SAME
#12 | 2014-08-07Thin film wafer transfer and structure for electronic devices
#13 | 2014-08-07Thin film wafer transfer and structure for electronic devices
#14 | 2014-07-10GROUP III NITRIDES ON NANOPATTERNED SUBSTRATES
#15 | 2014-07-10Group III nitrides on nanopatterned substrates
#16 | 2014-05-15Selective gallium nitride regrowth on (100) silicon
#17 | 2014-05-15Selective gallium nitride regrowth on (100) silicon
#18 | 2014-05-15Dual phase gallium nitride material formation on (100) silicon
#19 | 2013-10-24Laser-initiated exfoliation of group III-nitride films and applications for layer transfer and patterning
#20 | 2013-10-17Heterogeneous integration of group III nitride on silicon for advanced integrated circuits
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