Hsing-Lien LIN

MEMORY DEVICE STRUCTURE WITH DATA STORAGE ELEMENT

MIM CAPACITOR AND METHOD OF FORMING THE SAME

FeRAM WITH LAMINATED FERROELECTRIC FILM AND METHOD FORMING SAME

FeRAM with Laminated Ferroelectric Film and Method Forming Same

MIM CAPACITOR AND METHOD OF FORMING THE SAME

MEMORY DEVICE STRUCTURE WITH DATA STORAGE ELEMENT

Semiconductor MEMS structure

Method for forming semiconductor structure

FeRAM with laminated ferroelectric film and method forming same

FeRAM with laminated ferroelectric film and method forming same

Memory device structure with protective element

Semiconductor MEMS structure

Memory device structure

Image sensors with organic photodiodes and methods for forming the same

Semiconductor device structure with multiple resistance variable layers

Method of forming memory device with diffusion barrier and capping layer

Semiconductor device structure with multiple resistance variable layers

MIM capacitor and method of forming the same

Image sensors with organic photodiodes and methods for forming the same

MIM capacitor and method of forming the same

Method of fabricating an organic photodiode with dual electron blocking layers

Metal-insulator-metal structure and method for forming the same

Semiconductor device and method of forming the same

Organic photo diode with dual electron blocking layers

Image sensors with organic photodiodes and methods for forming the same

Anti-reflective layer for backside illuminated CMOS image sensors

MIM capacitors with improved reliability

Method of forming metal-insulator-metal structure

Low tunneling current MIM structure and method of manufacturing same