Dechao Guo

Partial sacrificial dummy gate with CMOS device with high-k metal gate

Self-Aligned III-V MOSFET Fabrication With In-Situ III-V Epitaxy And In-Situ Metal Epitaxy and Contact Formation

Self aligned embedded gate carbon transistors

Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion

Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion

Partial sacrificial dummy gate with CMOS device with high-k metal gate

STACKED CARBON-BASED FETS

CONTINUOUSLY SCALABLE WIDTH AND HEIGHT SEMICONDUCTOR FINS

Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion

Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels

Semiconductor-on-insulator device including stand-alone well implant to provide junction butting

Semiconductor-on-insulator device including stand-alone well implant to provide junction butting

Light emitting diode (LED) using carbon materials

Strained finFET with an electrically isolated channel

Stacked carbon-based FETs

Stacked carbon-based FETs

Self aligned embedded gate carbon transistors

Self aligned embedded gate carbon transistors

Method and structure for dielectric isolation in a fin field effect transistor

Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels

STRESS-ENHANCING SELECTIVE EPITAXIAL DEPOSITION OF EMBEDDED SOURCE AND DRAIN REGIONS

Work function adjustment by carbon implant in semiconductor devices including gate structure

Partial sacrificial dummy gate with CMOS device with high-k metal gate

Extremely Thin Semiconductor-On-Insulator Field-Effect Transistor With An Epitaxial Source And Drain Having A Low External Resistance

EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR FIELD-EFFECT TRANSISTOR WITH AN EPITAXIAL SOURCE AND DRAIN HAVING A LOW EXTERNAL RESISTANCE

Strained finFET with an electrically isolated channel

Non-volatile graphene nanomechanical switch

Non-volatile graphene nanomechanical switch

Structure and method to form passive devices in ETSOI process flow

Transistors with uniaxial stress channels

Partially-blocked well implant to improve diode ideality with SiGe anode

Partially-blocked well implant to improve diode ideality with SiGe anode

Replacement gate electrode with planar work function material layers

Continuously scalable width and height semiconductor fins

PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING

PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING

Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation

Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation

FIN FIELD EFFECT TRANSISTOR WITH VARIABLE CHANNEL THICKNESS FOR THRESHOLD VOLTAGE TUNING

Self-aligned carbon electronics with embedded gate electrode

Transistors with uniaxial stress channels

Integration of SMT in replacement gate FINFET process flow

finFET with fully silicided gate

Scaling of metal gate with aluminum containing metal layer for threshold voltage shift

Controlling threshold voltage in carbon based field effect transistors

REDUCTION OF CONTACT RESISTANCE AND JUNCTION LEAKAGE

FinFET with fully silicided gate

III-V compound semiconductor material passivation with crystalline interlayer

Embedded stressors for multigate transistor devices

Embedded stressors for multigate transistor devices

FETs with hybrid channel materials

Transistor employing vertically stacked self-aligned carbon nanotubes

Transistor employing vertically stacked self-aligned carbon nanotubes

Method to fabricate multicrystal solar cell with light trapping surface using nanopore copolymer

Threshold Voltage Adjustment For Thin Body Mosfets

Threshold voltage adjustment for thin body MOSFETs

FinFET structure and method to adjust threshold voltage in a FinFET structure

Method to fabricate a vertical transistor having an asymmetric gate with two conductive layers having different work functions

Carbon implant for workfunction adjustment in replacement gate transistor

Carbon implant for workfunction adjustment in replacement gate transistor

Vertical transistor having an asymmetric gate

Controlling threshold voltage in carbon based field effect transistors

Work function adjustment by carbon implant in semiconductor devices including gate structure

Light emitting diode (LED) using carbon materials

Structure and method to form passive devices in ETSOI process flow

Nanopillar E-fuse structure and process

Single Liner Process to Achieve Dual Stress

Replacement gate electrode with planar work function material layers

Self-aligned carbon electronics with embedded gate electrode

REPLACEMENT GATE ELECTRODE WITH A TUNGSTEN DIFFUSION BARRIER LAYER

Self-aligned carbon electronics with embedded gate electrode

Post-planarization UV curing of stress inducing layers in replacement gate transistor fabrication

Resonance nanoelectromechanical systems

Nanopillar decoupling capacitor

Structure and process for metal fill in replacement metal gate integration

Fin field effect transistor with variable channel thickness for threshold voltage tuning

Tensile stress enhancement of nitride film for stressed channel field effect transistor fabrication

Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation

III-V compound semiconductor material passivation with crystalline interlayer

Replacement metal gate method