La Terrasse
France
20
2020-02-06
The entities that hold a legal rights for patent applications filed by inventor Halimaoui Aomar:
Aomar Halimaoui from La Terrasse, FR has applied for patents for these inventions. The list has both pending applications and granted patents:
DEVICE BASED ON ALKALI METAL NIOBATE COMPRISING A BARRIER LAYER AND MANUFACTURING PROCESS
#2 | 2018-09-06Method of manufacturing a memory device
#3 | 2017-03-16Method for causing tensile strain in a semiconductor film
#4 | 2017-02-02Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-metal type, and method for fabricating one such electrode and one such capacitor
#5 | 2016-07-28PROCESS FOR ASSEMBLING TWO WAFERS AND CORRESPONDING DEVICE
#6 | 2015-06-04METHOD FOR THE METALLIZATION OF A POROUS MATERIAL
#7 | 2014-09-25Method of forming a strained silicon layer
#8 | 2013-10-17Housing, in particular for a biofuel cell
#9 | 2012-09-06MODULE ELEMENT, IN PARTICULAR FOR A BIOFUEL CELL, AND MANUFACTURING PROCESS
#10 | 2012-06-28Process for assembling two wafers and corresponding device
#11 | 2012-04-19Method for forming integrated circuits on a strained semiconductor substrate
#12 | 2010-12-23Integrated circuit comprising a capacitor with HSG metal electrodes
#13 | 2010-11-18Method for making a semi-conducting substrate located on an insulation layer
#14 | 2008-08-07Integrated circuit comprising a capacitor with metal electrodes and process for fabricating such a capacitor
#15 | 2008-04-17Manufacturing method of semiconductor-on-insulator region structures
#16 | 2007-08-23Method for the selective removal of an unsilicided metal
#17 | 2006-04-27Method for forming silicon-germanium in the upper portion of a silicon substrate
#18 | 2005-04-21Manufacturing method of semiconductor-on-insulator region structures
#19 | 2005-02-17Process for fabricating strained layers of silicon or of a silicon/germanium alloy
#20 | 2005-02-03Method for forming a localized region of a material difficult to etch
486892 ⎘