Inventor profile of:

Mitsuhiro Tanaka

City:

Handa

Country:

Japan

Published Applications:

11

Last publication date:

2012-05-24

Top Assignees for applications by Mitsuhiro Tanaka

The entities that hold a legal rights for patent applications filed by inventor Tanaka Mitsuhiro:

Recent patent applications by Tanaka Mitsuhiro

Mitsuhiro Tanaka from Handa, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-05-24
US20120126293A1
Electricity

Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device

#2 | 2011-06-07
US10737602
-

Apparatus for fabricating a III-V nitride film

#3 | 2010-03-04
US20100051961A1
Electricity

Epitaxial substrate, semiconductor device substrate, and HEMT device

#4 | 2008-12-18
US20080308909A1
Chemistry; metallurgy

Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers

#5 | 2006-06-27
US10017325
-

Semiconductor element

#6 | 2006-01-24
US10891340
-

Method for fabricating a III nitride film, an underlayer for fabricating a III nitride film and a method for fabricating the same underlayer

#7 | 2005-09-13
US10813565
-

Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method

#8 | 2005-08-04
US20050170539A1
Electricity

Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method

#9 | 2005-02-10
US20050028888A1
Chemistry; metallurgy

Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers

#10 | 2005-01-18
US10247366
-

III nitride epitaxial substrate, epitaxial substrate for III nitride element, and III nitride element that includes a surface nitride layer formed on the main surface of a sapphire single crystal

#11 | 2005-01-13
US20050009221A1
Chemistry; metallurgy

Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method

InventorID:

4889636 ⎘