Inventor profile of:

Karen E. Moore

City:

Phoenix, Arizona

Country:

United States

Published Applications:

15

Last publication date:

2017-11-02

Top Assignees for applications by Karen E. Moore

The entities that hold a legal rights for patent applications filed by inventor Moore Karen E.:

Recent patent applications by Moore Karen E.

Karen E. Moore from Phoenix, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2017-11-02
US20170317202A1
Electricity

Semiconductor device with selectively etched surface passivation

#2 | 2017-10-12
US20170294531A1
Electricity

Semiconductor device with a recessed ohmic contact and methods of fabrication

#3 | 2017-08-17
US20170236929A1
Electricity

Semiconductor device with selectively etched surface passivation

#4 | 2015-12-10
US20150357452A1
Electricity

Semiconductor device with selectively etched surface passivation

#5 | 2015-10-29
US20150311084A1
Electricity

Method for improving E-beam lithography gate metal profile for enhanced field control

#6 | 2015-10-15
US20150295075A1
Electricity

High speed gallium nitride transistor devices

#7 | 2015-05-21
US20150137135A1
Electricity

Semiconductor devices with integrated Schottky diodes and methods of fabrication

#8 | 2015-05-14
US20150132932A1
Electricity

Semiconductor device with selectively etched surface passivation

#9 | 2014-03-27
US20140087550A1
Electricity

Methods of making semiconductor devices with low leakage Schottky contacts

#10 | 2013-12-26
US20130341679A1
Electricity

Semiconductor device with selectively etched surface passivation

#11 | 2013-12-26
US20130341678A1
Electricity

Semiconductor device with selectively etched surface passivation

#12 | 2013-10-24
US20130277680A1
Electricity

High speed gallium nitride transistor devices

#13 | 2012-06-21
US20120156843A1
Electricity

DIELECTRIC LAYER FOR GALLIUM NITRIDE TRANSISTOR

#14 | 2011-06-30
US20110156051A1
Electricity

Semiconductor devices with low leakage Schottky contacts

#15 | 2009-06-11
US20090146191A1
Electricity

Method for forming semiconductor devices with low leakage Schottky contacts

InventorID:

493361 ⎘