Inventor profile of:

Howard E. Rhodes

City:

Boise, Idaho

Country:

United States

Published Applications:

175

Last publication date:

2015-05-14

Top Assignees for applications by Howard E. Rhodes

The entities that hold a legal rights for patent applications filed by inventor Rhodes Howard E.:

Recent patent applications by Rhodes Howard E.

Howard E. Rhodes from Boise, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-05-14
US20150130080A1
Electricity

SEMICONDUCTOR DEVICE STRUCTURES INCLUDING DAMASCENE STRUCTURES

#2 | 2013-10-24
US20130277721A1
Electricity

Methods for fabricating and forming semiconductor device structures including damascene structures

#3 | 2012-09-20
US20120237165A1
Physics

Resonator for thermo optic device

#4 | 2012-01-12
US20120007209A1
Electricity

Semiconductor device structures including damascene trenches with conductive structures and related method

#5 | 2011-10-20
US20110254163A1
Electricity

Sleeve insulators and semiconductor device including the same

#6 | 2011-08-25
US20110206332A1
Physics

Waveguide for thermo optic device

#7 | 2011-07-14
US20110169993A1
Electricity

Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors

#8 | 2011-05-17
US10871242
-

Advanced VLSI metallization

#9 | 2010-11-25
US20100297807A1
Electricity

CMOS imager having a nitride dielectric

#10 | 2010-11-18
US20100290265A1
Electricity

Polymer-based ferroelectric memory

#11 | 2010-10-14
US20100258709A1
Electricity

Pumps for CMOS imagers

#12 | 2010-09-07
US9172298
-

CMOS imager having a nitride dielectric

#13 | 2010-09-02
US20100220958A1
Physics

Waveguide for thermo optic device

#14 | 2010-08-12
US20100201860A1
Electricity

Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors

#15 | 2010-08-12
US20100201859A1
Electricity

Transparent conductor based pinned photodiode

#16 | 2010-06-17
US20100149395A1
Electricity

Active pixel sensor with a diagonal active area

#17 | 2010-05-04
US10461440
-

Pumps for CMOS imagers

#18 | 2010-04-06
US10661494
-

Active pixel sensor with a diagonal active area

#19 | 2010-04-01
US20100079645A1
Electricity

CMOS IMAGER AND SYSTEM WITH SELECTIVELY SILICIDED GATES

#20 | 2010-03-11
US20100059662A1
Electricity

CMOS IMAGER AND APPARATUS WITH SELECTIVELY SILICIDED GATES

#21 | 2009-12-03
US20090298272A1
Electricity

Single poly CMOS imager

#22 | 2009-11-17
US10761319
-

Retrograde well structure for a CMOS imager

#23 | 2009-08-20
US20090206429A1
Electricity

Angled implant for trench isolation

#24 | 2009-07-23
US20090184345A1
Electricity

Contacts for CMOS imagers and method of formation

#25 | 2009-07-09
US20090173975A1
Electricity

Well for CMOS imager

#26 | 2009-02-05
US20090032685A1
Electricity

Trench photosensor for a CMOS imager

#27 | 2009-02-03
US9008531
-

Method of making a semiconductor device having improved contacts

#28 | 2009-01-01
US20090001428A1
Electricity

Optimized transistor for imager device

#29 | 2008-09-18
US20080226247A1
Physics

Waveguide for thermo optic device

#30 | 2008-08-07
US20080188029A1
Electricity

Pinned photodiode structure and method of formation

#31 | 2008-07-24
US20080176350A1
Electricity

Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors

#32 | 2008-06-24
US10869868
-

Imager light shield

#33 | 2008-06-17
US9388567
-

Local multilayered metallization

#34 | 2008-04-24
US20080096302A1
Electricity

Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation

#35 | 2008-04-17
US20080089647A1
Physics

Resonator for thermo optic device

#36 | 2007-10-09
US10404145
-

Passivation planarization

#37 | 2007-09-13
US20070210360A1
Electricity

CMOS imager with selectively silicided gate

#38 | 2007-09-06
US20070205447A1
Electricity

Active pixel sensor with a diagonal active area

#39 | 2007-08-30
US20070200181A1
Electricity

Buried conductor for imagers

#40 | 2007-07-31
US10825372
-

Method of forming a photosensor

#41 | 2007-07-19
US20070166854A1
Electricity

Passivation planarization

#42 | 2007-06-28
US20070145512A1
Electricity

Photogate stack with nitride insulating cap over conductive layer

#43 | 2007-05-31
US20070120158A1
Electricity

High dynamic range image sensor

#44 | 2007-05-03
US20070096241A1
Electricity

Pixel cell with a controlled output signal knee characteristic response

#45 | 2007-04-12
US20070080424A1
Electricity

Well for CMOS imager and method of formation

#46 | 2007-03-29
US20070072333A1
Electricity

Reduced barrier photodiode / gate device structure for high efficiency charge transfer and reduced lag and method of formation

#47 | 2007-03-29
US20070072325A1
Electricity

Self-aligned photodiode for CMOS image sensor and method of making

#48 | 2007-03-29
US20070069270A1
Electricity

Top electrode in a strongly oxidizing environment

#49 | 2007-03-08
US20070052035A1
Electricity

Method and apparatus for reducing optical crosstalk in CMOS image sensors

#50 | 2007-03-08
US20070051989A1
Electricity

Trench photosensor for a CMOS imager

#51 | 2007-03-06
US10602721
-

Reduced barrier photodiode/transfer gate device structure of high efficiency charge transfer and reduced lag and method of formation

#52 | 2007-02-15
US20070034983A1
Electricity

CMOS imager with selectively silicided gates

#53 | 2007-02-15
US20070034917A1
Electricity

Dual capacitor structure for imagers

#54 | 2007-02-15
US20070034914A1
Electricity

Isolation trench geometry for image sensors

#55 | 2007-02-08
US20070029637A1
Electricity

Image sensor for reduced dark current

#56 | 2007-02-08
US20070029590A1
Electricity

Image sensor for reduced dark current

#57 | 2007-02-08
US20070029469A1
Electricity

CMOS pixel and imaging device supporting automatic light control (ALC) and correlated double sampling (CDS)

#58 | 2007-01-25
US20070018269A1
Electricity

Raised silicon photodiode

#59 | 2007-01-25
US20070018264A1
Electricity

Optimized image sensor process and structure to improve blooming

#60 | 2007-01-25
US20070018211A1
Electricity

High dielectric constant spacer for imagers

#61 | 2007-01-23
US10117281
-

Photogate for use in an imaging device

#62 | 2007-01-18
US20070013018A1
Electricity

Imaging device and method of manufacture

#63 | 2007-01-18
US20070012962A1
Electricity

Method for making image sensor with reduced etching damage

#64 | 2007-01-04
US20070004199A1
Electricity

Method of fabricating a sleeve insulator for a contact structure

#65 | 2007-01-04
US20070001235A1
Electricity

Buried conductor for imagers

#66 | 2007-01-02
US10284248
-

Imaging device and method of manufacture

#67 | 2006-12-21
US20060286708A1
Electricity

Image sensor and pixel having an optimized floating diffusion

#68 | 2006-11-23
US20060263027A1
Physics

Resonator for thermo optic device

#69 | 2006-11-16
US20060255382A1
Electricity

Pinned photodiode structure and method of formation

#70 | 2006-11-09
US20060249767A1
Electricity

Pinned photodiode structure and method of formation

#71 | 2006-11-09
US20060249766A1
Electricity

Pinned photodiode structure and method of formation

#72 | 2006-11-02
US20060244015A1
Electricity

Trench isolation for semiconductor devices

#73 | 2006-11-02
US20060243981A1
Electricity

Masked spacer etching for imagers

#74 | 2006-10-17
US10648245
-

Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation

#75 | 2006-10-12
US20060226503A1
Electricity

Isolation trench geometry for image sensors

#76 | 2006-10-10
US10231897
-

Resonator for thermo optic device

#77 | 2006-10-03
US10034236
-

Method of making a contact structure

#78 | 2006-09-28
US20060214201A1
Electricity

Method and apparatus for reducing imager floating diffusion leakage

#79 | 2006-09-12
US10053300
-

Transistor structure having reduced transistor leakage attributes

#80 | 2006-09-07
US20060199387A1
Electricity

LOCAL MULTILAYERED METALLIZATION

#81 | 2006-09-05
US10878350
-

Passivation planarization

#82 | 2006-09-05
US10694990
-

Image device and photodiode structure

#83 | 2006-08-17
US20060183323A1
Electricity

Salicide process using CMP for image sensor

#84 | 2006-08-17
US20060183268A1
Electricity

Salicide process for image sensor

#85 | 2006-08-17
US20060180885A1
Electricity

Image sensor using deep trench isolation

#86 | 2006-08-15
US10871018
-

Method of forming a photosensor comprising a plurality of trenches

#87 | 2006-07-20
US20060158538A1
Electricity

Image sensor pixel having a lateral doping profile formed with indium doping

#88 | 2006-07-20
US20060157806A1
Electricity

Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response

#89 | 2006-07-20
US20060157758A1
Electricity

Image sensor and pixel having an optimized floating diffusion

#90 | 2006-07-13
US20060151848A1
Electricity

Photogate with improved short wavelength response for a CMOS imager

#91 | 2006-07-11
US10458262
-

Dual conversion gain imagers

#92 | 2006-07-11
US10378796
-

Damascene processes for forming conductive structures

#93 | 2006-07-06
US20060148120A1
Electricity

Deuterium alloy process for image sensors

#94 | 2006-07-04
US10848389
-

Trench isolation for semiconductor devices

#95 | 2006-07-04
US10752555
-

Method and apparatus for reducing imager floating diffusion leakage

#96 | 2006-06-22
US20060131592A1
Electricity

Image sensor pixel having a transfer gate formed from P+ or N+ doped polysilicon

#97 | 2006-06-15
US20060125007A1
Electricity

Local interconnect structure and method for a CMOS image sensor

#98 | 2006-06-08
US20060118836A1
Electricity

Image sensor pixel having photodiode with indium pinning layer

#99 | 2006-06-08
US20060118781A1
Electricity

Image sensor and pixel having a polysilicon layer over the photodiode

#100 | 2006-05-23
US10421157
-

Polymer-based ferroelectric memory

InventorID:

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