Inventor profile of:

Hsin-Ming Chen

City:

Hsinchu

Country:

Taiwan

Published Applications:

35

Last publication date:

2023-04-20

Top Assignees for applications by Hsin-Ming Chen

The entities that hold a legal rights for patent applications filed by inventor Chen Hsin-Ming:

Recent patent applications by Chen Hsin-Ming

Hsin-Ming Chen from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-04-20
US20230122423A1
Physics

Integrated circuit and method for executing cache management operation

#2 | 2019-05-30
US20190165955A1
Electricity

Anti-counterfeit communication system

#3 | 2019-03-14
US20190081804A1
Electricity

Security system with entropy bits

#4 | 2019-03-14
US20190079878A1
Physics

Security system using random number bit string

#5 | 2019-03-14
US20190079732A1
Physics

Random code generator and associated random code generating method

#6 | 2019-01-08
US16038143
Electricity

Physically unclonable function unit with one single anti-fuse transistor

#7 | 2018-04-12
US20180102909A1
Electricity

Antifuse physically unclonable function unit and associated control method

#8 | 2017-11-30
US20170345828A1
Electricity

Non-volatile memory and method for programming and reading a memory array having the same

#9 | 2017-10-19
US20170301634A1
Electricity

Semiconductor apparatus with fake functionality

#10 | 2017-07-20
US20170206980A1
Physics

Method for programming antifuse-type one time programmable memory cell

#11 | 2017-04-04
US15209079
Physics

One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method

#12 | 2017-03-16
US20170076757A1
Physics

One-time programmable memory array having small chip area

#13 | 2016-05-19
US20160141295A1
Electricity

One-time programmable memory cell capable of reducing leakage current and preventing slow bit response, and method for programming a memory array comprising the same

#14 | 2016-04-14
US20160104542A1
Physics

Memory cell capable of operating under low voltage conditions

#15 | 2016-01-14
US20160013193A1
Electricity

One time programming memory cell, array structure and operating method thereof

#16 | 2015-10-08
US20150287730A1
Electricity

Antifuse OTP memory cell with performance improvement, and manufacturing method and operating method of memory

#17 | 2015-08-27
US20150243366A1
Physics

One time programmable memory cell capable of reducing leakage current and preventing slow bit response

#18 | 2014-11-20
US20140340955A1
Physics

One time programmable memory cell capable of reducing leakage current and preventing slow bit response

#19 | 2014-04-10
US20140101352A1
Physics

Interrupt controller, apparatus including interrupt controller, and corresponding methods for processing interrupt request event(s) in system including processor(s)

#20 | 2014-04-10
US20140098591A1
Physics

Antifuse OTP memory cell with performance improvement prevention and operating method of memory

#21 | 2014-02-27
US20140056051A1
Physics

One-bit memory cell for nonvolatile memory and associated controlling method

#22 | 2013-11-14
US20130302977A1
Electricity

Method of fabricating erasable programmable single-poly nonvolatile memory

#23 | 2013-09-19
US20130242663A1
Physics

Programming inhibit method of nonvolatile memory apparatus for reducing leakage current

#24 | 2013-09-12
US20130237048A1
Electricity

Method of fabricating erasable programmable single-poly nonvolatile memory

#25 | 2013-09-12
US20130234228A1
Electricity

Erasable programmable single-ploy nonvolatile memory

#26 | 2013-09-12
US20130234227A1
Electricity

Erasable programmable single-ploy nonvolatile memory

#27 | 2013-07-11
US20130176793A1
Physics

Flash memory apparatus with programming voltage control generators

#28 | 2013-01-10
US20130010518A1
Electricity

Anti-fuse memory ultilizing a coupling channel and operating method thereof

#29 | 2012-06-28
US20120163072A1
Electricity

Non-volatile semiconductor memory cell with dual functions

#30 | 2012-05-31
US20120134205A1
Electricity

Operating method for non-volatile memory unit

#31 | 2012-04-12
US20120087170A1
Physics

Single polysilicon non-volatile memory

#32 | 2011-12-08
US20110299336A1
Electricity

Single polysilicon layer non-volatile memory and operating method thereof

#33 | 2006-10-03
US10409453
-

Method of fabricating reflective liquid crystal display integrated with driving circuit

#34 | 2005-11-17
US20050255623A1
Electricity

Method of manufacturing liquid crystal display

#35 | 2005-01-25
US10421776
-

Manufacturing method for liquid crystal display

InventorID:

4946007 ⎘