Freising
Germany
16
2013-10-24
The entities that hold a legal rights for patent applications filed by inventor Haeusler Alfred:
Alfred Haeusler from Freising, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
SEMICONDUCTOR DEVICE INCLUDING A DEEP CONTACT AND A METHOD OF MANUFACTURING SUCH A DEVICE
#2 | 2013-05-30Fully embedded micromechanical device, system on chip and method for manufacturing the same
#3 | 2012-08-16METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE
#4 | 2012-06-28Advanced CMOS using super steep retrograde wells
#5 | 2011-05-12Advanced CMOS using super steep retrograde wells
#6 | 2011-03-24Tuning of SOI substrate doping
#7 | 2010-11-11Semiconductor device including a deep contact and a method of manufacturing such a device
#8 | 2010-06-17Dopant Profile Control for Ultrashallow Arsenic Dopant Profiles
#9 | 2009-08-27Method of manufacturing an electronic device including a PNP bipolar transistor
#10 | 2009-05-21Advanced CMOS using super steep retrograde wells
#11 | 2008-06-05Advanced CMOS using super steep retrograde wells
#12 | 2006-09-07Advanced CMOS using super steep retrograde wells
#13 | 2006-08-10Advanced CMOS using super steep retrograde wells
#14 | 2006-06-20Advanced CMOS using super steep retrograde wells
#15 | 2005-05-12Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer
#16 | 2005-01-06Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistor
497858 ⎘