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Inventor profile of:

Ning LI

City:

Hefei

Country:

China

Published Applications:

6

Last publication date:

2024-03-21

Top Assignees for applications by Ning LI

The entities that hold a legal rights for patent applications filed by inventor LI Ning:

  • CHANGXIN MEMORY TECHNOLOGIES, INC. 3 Hefei, China
  • CHANGXIN MEMORY TECHNOLOGIES, INC. 2 Hefei City, China

Recent patent applications by LI Ning

Ning LI from Hefei, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-03-21
US20240096410A1
Physics

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MEMORY

#2 | 2023-11-16
US20230368827A1
Physics

Drive circuit, method for driving drive circuit, and memory

#3 | 2023-06-15
US20230187522A1
Electricity

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

#4 | 2023-01-19
US20230016209A1
Physics

SEMICONDUCTOR STRUCTURE AND MEMORY

#5 | 2022-07-28
US20220238675A1
Electricity

TRENCH-GATE TRANSISTOR WITH GATE DIELECTRIC HAVING A FIRST THICKNESS BETWEEN THE GATE ELECTRODE AND THE CHANNEL REGION AND A SECOND GREATER THICKNESS BETWEEN THE GATE ELECTRODE AND THE SOURCE/DRAIN REGIONS

#6 | 2021-02-18
US20210050426A1
Electricity

Trench-gate transistor with gate dielectric having a first thickness between the gate electrode and the channel region and a second greater thickness between the gate electrode and the source/drain regions

InventorID:

5006525 ⎘

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