Inventor profile of:

Te-Yang Lai

City:

Hsinchu

Country:

Taiwan

Published Applications:

47

Last publication date:

2026-06-18

Top Assignees for applications by Te-Yang Lai

The entities that hold a legal rights for patent applications filed by inventor Lai Te-Yang:

Recent patent applications by Lai Te-Yang

Te-Yang Lai from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-18
US20260173467A1
Electricity

SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

#2 | 2026-03-12
US20260075925A1
Electricity

NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

#3 | 2025-11-27
US20250366157A1
Electricity

Volumeless Threshold Voltage Tuning for Stacked Device Structures

#4 | 2025-11-20
US20250359164A1
Electricity

GATE DIELECTRIC LAYERS FOR STACKED MULTI-GATE DEVICE

#5 | 2025-11-13
US20250351560A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

#6 | 2025-11-06
US20250344483A1
Electricity

TRIPLE LAYER HIGH-K GATE DIELECTRIC STACK FOR WORKFUNCTION ENGINEERING

#7 | 2025-10-09
US20250316485A1
Electricity

Semiconductor Device Having Doped Gate Dielectric Layer and Method for Forming the Same

#8 | 2025-10-02
US20250308906A1
Electricity

DIPOLE-ENGINEERED HIGH-K GATE DIELECTRIC AND METHOD FORMING SAME

#9 | 2025-09-04
US20250279276A1
Electricity

SEMICONDUCTOR DEVICES INCLUDING CRYSTALLIZED LAYER HAVING MULTIPLE CRYSTALLINE ORIENTATIONS AND METHODS OF MANUFACTURE

#10 | 2025-01-16
US20250022879A1
Electricity

Volume-Less Dipole Incorporation into CFET Having Common Gate

#11 | 2024-11-21
US20240387704A1
Electricity

METHOD OF GAP FILLING FOR SEMICONDUCTOR DEVICE

#12 | 2024-10-03
US20240332010A1
Electricity

Semiconductor devices devices including crystallized layer having multiple crystalline orientations and methods of manufacture

#13 | 2024-09-19
US20240313076A1
Electricity

GATE DIELECTRIC LAYERS FOR STACKED MULTI-GATE DEVICE

#14 | 2024-09-12
US20240304449A1
Electricity

Dipole-Engineered High-K Gate Dielectric and Method Forming Same

#15 | 2024-08-29
US20240290662A1
Electricity

Volumeless Threshold Voltage Tuning for Stacked Device Structures

#16 | 2024-03-07
US20240079472A1
Electricity

Semiconductor device and manufacturing method for the semiconductor device

#17 | 2023-11-30
US20230387298A1
Electricity

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE

#18 | 2023-11-30
US20230387275A1
Electricity

Method of Gap Filling for Semiconductor Device

#19 | 2023-11-30
US20230386827A1
Electricity

Semiconductor devices and methods of manufacture

#20 | 2023-11-23
US20230378310A1
Electricity

Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices

#21 | 2023-11-23
US20230378294A1
Electricity

TRIPLE LAYER HIGH-K GATE DIELECTRIC STACK FOR WORKFUNCTION ENGINEERING

#22 | 2023-11-16
US20230369472A1
Electricity

Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices

#23 | 2023-11-16
US20230369124A1
Electricity

Nanostructure Field-Effect Transistor Device and Method of Forming

#24 | 2023-11-09
US20230360918A1
Electricity

Dipole-engineered high-k gate dielectric and method forming same

#25 | 2023-10-26
US20230343818A1
Electricity

Semiconductor Device and Method for Forming the Same

#26 | 2023-10-19
US20230335551A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

#27 | 2023-10-05
US20230317790A1
Electricity

Semiconductor Device having Doped Gate Dielectric Layer and Method for Forming the Same

#28 | 2023-10-05
US20230317524A1
Electricity

Semiconductor device and method of manufacture

#29 | 2023-07-13
US20230223439A1
Electricity

Semiconductor Devices and Methods of Forming the Same

#30 | 2023-06-08
US20230178601A1
Electricity

Semiconductor Device Having Doped Gate Dielectric Layer and Method for Forming the Same

#31 | 2022-07-14
US20220223712A1
Electricity

Semiconductor device and manufacturing method for the semiconductor device

#32 | 2022-06-09
US20220181495A1
Electricity

Semiconductor structure and manufacturing method for the semiconductor structure

#33 | 2022-05-12
US20220149182A1
Electricity

Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices

#34 | 2022-03-17
US20220084889A1
Electricity

Nanostructure field-effect transistor device and method of forming

#35 | 2022-02-24
US20220059671A1
Electricity

Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices

#36 | 2021-12-23
US20210399104A1
Electricity

Triple layer high-k gate dielectric stack for workfunction engineering

#37 | 2021-12-02
US20210375690A1
Electricity

Semiconductor device and method of manufacture

#38 | 2021-12-02
US20210375629A1
Electricity

Dipole-engineered high-k gate dielectric and method forming same

#39 | 2021-10-07
US20210313440A1
Electricity

Semiconductor device and manufacturing method for the semiconductor device

#40 | 2021-09-23
US20210296469A1
Electricity

Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices

#41 | 2021-09-23
US20210296464A1
Electricity

Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices

#42 | 2021-09-09
US20210280415A1
Electricity

Semiconductor devices and methods of manufacture

#43 | 2021-08-26
US20210265507A1
Electricity

Semiconductor structure and manufacturing method for the semiconductor structure

#44 | 2021-07-22
US20210226038A1
Electricity

Method of gap filling for semiconductor device

#45 | 2021-02-25
US20210057540A1
Electricity

Method of gap filling for semiconductor device

#46 | 2021-02-25
US20210057224A1
Electricity

Semiconductor device and method of manufacture

#47 | 2021-02-25
US20210057216A1
Electricity

Semiconductor devices and methods of manufacture

InventorID:

5012044 ⎘