Plano, Texas
United States
52
2021-09-30
The entities that hold a legal rights for patent applications filed by inventor Deng Xiaowei:
Xiaowei Deng from Plano, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Sense amplifier look-through latch for FAMOS-based EPROM
#2 | 2018-03-08Array power supply-based screening of static random access memory cells for bias temperature instability
#3 | 2015-12-03Array power supply-based screening of static random access memory cells for bias temperature instability
#4 | 2015-11-26Array power supply-based screening of static random access memory cells for bias temperature instability
#5 | 2015-11-26Array power supply-based screening of static random access memory cells for bias temperature instability
#6 | 2014-05-08SRAM with buffered-read bit cells and its testing
#7 | 2014-03-20STATIC RANDOM ACCESS MEMORY CELL WITH SINGLE-SIDED BUFFER AND ASYMMETRIC CONSTRUCTION
#8 | 2013-12-26SRAM WITH BUFFERED-READ BIT CELLS AND ITS TESTING
#9 | 2013-12-05Static random-access memory cell array with deep well regions
#10 | 2013-11-07Reducing power in SRAM using supply voltage control
#11 | 2013-07-18Efficient static random-access memory layout
#12 | 2013-07-18Static random access memory cell with single-sided buffer and asymmetric construction
#13 | 2013-07-11Functional screening of static random access memories using an array bias voltage
#14 | 2013-03-14DISTURB-FREE STATIC RANDOM ACCESS MEMORY CELL
#15 | 2013-02-21Array-based integrated circuit with reduced proximity effects
#16 | 2013-01-31Method of screening static random access memories for unstable memory cells
#17 | 2013-01-24Array power supply-based screening of static random access memory cells for bias temperature instability
#18 | 2012-09-06Solid-state memory cell with improved read stability
#19 | 2012-05-03Array-based integrated circuit with reduced proximity effects
#20 | 2012-01-19SRAM with buffered-read bit cells and its testing
#21 | 2012-01-19Memory cell with equalization write assist in solid-state memory
#22 | 2012-01-19Disturb-free static random access memory cell
#23 | 2011-12-29Bit-by-bit write assist for solid-state memory
#24 | 2011-12-08Margin testing of static random access memory cells
#25 | 2011-11-10Universal test structures based SRAM on-chip parametric test module and methods of operating and testing
#26 | 2011-08-18UNIVERSAL STRUCTURE FOR MEMORY CELL CHARACTERIZATION
#27 | 2011-06-30Structure and methods for measuring margins in an SRAM bit
#28 | 2011-06-30METHOD FOR MEMORY CELL CHARACTERIZATION USING UNIVERSAL STRUCTURE
#29 | 2011-03-03Method and structure for SRAM cell trip voltage measurement
#30 | 2011-03-03Method and structure for SRAM Vmin/Vmax measurement
#31 | 2011-01-20Structure and method for screening SRAMS
#32 | 2010-09-16Method for constructing Shmoo plots for SRAMs
#33 | 2010-08-19Structure and methods for measuring margins in an SRAM bit
#34 | 2010-06-24Mitigation of charge sharing in memory devices
#35 | 2010-05-06Bitline leakage detection in memories
#36 | 2009-07-09Characterization of bits in a functional memory
#37 | 2009-07-09Memory cell layout structure with outer bitline
#38 | 2008-06-19Method for memory cell characterization using universal structure
#39 | 2008-06-19Universal structure for memory cell characterization
#40 | 2007-05-31Method for testing transistors having an active region that is common with other transistors and a testing circuit for accomplishing the same
#41 | 2007-02-01SRAM cell with column select line
#42 | 2006-05-02Low leakage SRAM scheme
#43 | 2006-04-11Bit line control for low power in standby
#44 | 2005-12-13Static logic design for CMOS
#45 | 2005-09-29Leakage current reduction method
#46 | 2005-08-18Bit line control for low power in standby
#47 | 2005-06-16High performance SRAM device and method of powering-down the same
#48 | 2005-05-05SRAM device and a method of powering-down the same
#49 | 2005-03-22System and method for measuring a capacitance associated with an integrated circuit
#50 | 2005-03-03Voltage keeping scheme for low-leakage memory devices
#51 | 2005-02-17System for reducing row periphery power consumption in memory devices
#52 | 2005-01-13System for reducing row periphery power consumption in memory devices
50772 ⎘