Inventor profile of:

Xiaowei Deng

City:

Plano, Texas

Country:

United States

Published Applications:

52

Last publication date:

2021-09-30

Top Assignees for applications by Xiaowei Deng

The entities that hold a legal rights for patent applications filed by inventor Deng Xiaowei:

Recent patent applications by Deng Xiaowei

Xiaowei Deng from Plano, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2021-09-30
US20210304824A1
Physics

Sense amplifier look-through latch for FAMOS-based EPROM

#2 | 2018-03-08
US20180068713A1
Physics

Array power supply-based screening of static random access memory cells for bias temperature instability

#3 | 2015-12-03
US20150348615A1
Physics

Array power supply-based screening of static random access memory cells for bias temperature instability

#4 | 2015-11-26
US20150340084A1
Physics

Array power supply-based screening of static random access memory cells for bias temperature instability

#5 | 2015-11-26
US20150340081A1
Physics

Array power supply-based screening of static random access memory cells for bias temperature instability

#6 | 2014-05-08
US20140126277A1
Physics

SRAM with buffered-read bit cells and its testing

#7 | 2014-03-20
US20140078819A1
Physics

STATIC RANDOM ACCESS MEMORY CELL WITH SINGLE-SIDED BUFFER AND ASYMMETRIC CONSTRUCTION

#8 | 2013-12-26
US20130343136A1
Physics

SRAM WITH BUFFERED-READ BIT CELLS AND ITS TESTING

#9 | 2013-12-05
US20130320458A1
Electricity

Static random-access memory cell array with deep well regions

#10 | 2013-11-07
US20130294149A1
Physics

Reducing power in SRAM using supply voltage control

#11 | 2013-07-18
US20130182495A1
Electricity

Efficient static random-access memory layout

#12 | 2013-07-18
US20130182490A1
Physics

Static random access memory cell with single-sided buffer and asymmetric construction

#13 | 2013-07-11
US20130176772A1
Physics

Functional screening of static random access memories using an array bias voltage

#14 | 2013-03-14
US20130064007A1
Physics

DISTURB-FREE STATIC RANDOM ACCESS MEMORY CELL

#15 | 2013-02-21
US20130044536A1
Physics

Array-based integrated circuit with reduced proximity effects

#16 | 2013-01-31
US20130028036A1
Physics

Method of screening static random access memories for unstable memory cells

#17 | 2013-01-24
US20130021864A1
Physics

Array power supply-based screening of static random access memory cells for bias temperature instability

#18 | 2012-09-06
US20120224414A1
Physics

Solid-state memory cell with improved read stability

#19 | 2012-05-03
US20120106225A1
Physics

Array-based integrated circuit with reduced proximity effects

#20 | 2012-01-19
US20120014195A1
Physics

SRAM with buffered-read bit cells and its testing

#21 | 2012-01-19
US20120014194A1
Physics

Memory cell with equalization write assist in solid-state memory

#22 | 2012-01-19
US20120014173A1
Physics

Disturb-free static random access memory cell

#23 | 2011-12-29
US20110317476A1
Physics

Bit-by-bit write assist for solid-state memory

#24 | 2011-12-08
US20110299349A1
Physics

Margin testing of static random access memory cells

#25 | 2011-11-10
US20110273946A1
Physics

Universal test structures based SRAM on-chip parametric test module and methods of operating and testing

#26 | 2011-08-18
US20110199806A1
Physics

UNIVERSAL STRUCTURE FOR MEMORY CELL CHARACTERIZATION

#27 | 2011-06-30
US20110158018A1
Physics

Structure and methods for measuring margins in an SRAM bit

#28 | 2011-06-30
US20110158017A1
Physics

METHOD FOR MEMORY CELL CHARACTERIZATION USING UNIVERSAL STRUCTURE

#29 | 2011-03-03
US20110051540A1
Physics

Method and structure for SRAM cell trip voltage measurement

#30 | 2011-03-03
US20110051539A1
Physics

Method and structure for SRAM Vmin/Vmax measurement

#31 | 2011-01-20
US20110013470A1
Physics

Structure and method for screening SRAMS

#32 | 2010-09-16
US20100232242A1
Physics

Method for constructing Shmoo plots for SRAMs

#33 | 2010-08-19
US20100208536A1
Physics

Structure and methods for measuring margins in an SRAM bit

#34 | 2010-06-24
US20100157642A1
Physics

Mitigation of charge sharing in memory devices

#35 | 2010-05-06
US20100110807A1
Physics

Bitline leakage detection in memories

#36 | 2009-07-09
US20090175113A1
Physics

Characterization of bits in a functional memory

#37 | 2009-07-09
US20090173971A1
Electricity

Memory cell layout structure with outer bitline

#38 | 2008-06-19
US20080148116A1
Physics

Method for memory cell characterization using universal structure

#39 | 2008-06-19
US20080144421A1
Physics

Universal structure for memory cell characterization

#40 | 2007-05-31
US20070121390A1
Physics

Method for testing transistors having an active region that is common with other transistors and a testing circuit for accomplishing the same

#41 | 2007-02-01
US20070025162A1
Physics

SRAM cell with column select line

#42 | 2006-05-02
US10349277
-

Low leakage SRAM scheme

#43 | 2006-04-11
US10337069
-

Bit line control for low power in standby

#44 | 2005-12-13
US9932395
-

Static logic design for CMOS

#45 | 2005-09-29
US20050212554A1
Electricity

Leakage current reduction method

#46 | 2005-08-18
US20050180200A1
Physics

Bit line control for low power in standby

#47 | 2005-06-16
US20050128852A1
Physics

High performance SRAM device and method of powering-down the same

#48 | 2005-05-05
US20050094474A1
Physics

SRAM device and a method of powering-down the same

#49 | 2005-03-22
US10187671
-

System and method for measuring a capacitance associated with an integrated circuit

#50 | 2005-03-03
US20050047233A1
Physics

Voltage keeping scheme for low-leakage memory devices

#51 | 2005-02-17
US20050036385A1
Physics

System for reducing row periphery power consumption in memory devices

#52 | 2005-01-13
US20050007861A1
Physics

System for reducing row periphery power consumption in memory devices

InventorID:

50772 ⎘