Inventor profile of:

Promod KUMAR

City:

Greater Noida

Country:

India

Published Applications:

37

Last publication date:

2026-06-18

Top Assignees for applications by Promod KUMAR

The entities that hold a legal rights for patent applications filed by inventor KUMAR Promod:

Recent patent applications by KUMAR Promod

Promod KUMAR from Greater Noida, IN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-18
US20260171147A1
Physics

ANALOG IN-MEMORY COMPUTATION PROCESSING CIRCUIT USING SEGMENTED MEMORY ARCHITECTURE

#2 | 2026-03-05
US20260066028A1
Physics

SHADOW LOGIC ON OUTPUT, AT SPEED TEST (MEMORY BYPASS) ARCHITECTURE FOR MEMORIES WITHOUT INPUT DATA

#3 | 2026-03-05
US20260065976A1
Physics

ENHANCED ACCURACY OF BIT LINE READING FOR AN IN-MEMORY COMPUTE OPERATION BY ACCOUNTING FOR VARIATION IN READ CURRENT

#4 | 2026-03-05
US20260065975A1
Physics

BIT LINE READ CURRENT MIRRORING CIRCUIT FOR AN IN-MEMORY COMPUTE OPERATION WHERE SIMULTANEOUS ACCESS IS MADE TO PLURAL ROWS OF A STATIC RANDOM ACCESS MEMORY (SRAM)

#5 | 2026-01-29
US20260031139A1
Physics

MEMORY ARCHITECTURE WITH A DIGITAL IN-MEMORY COMPUTATION PROCESSING MODE AND A COLUMN MULTIPLEXING MEMORY ACCESS MODE

#6 | 2026-01-15
US20260018228A1
Physics

AT-SPEED TRANSITION FAULT TESTING FOR A MULTI-PORT AND MULTI-CLOCK MEMORY

#7 | 2025-10-02
US20250308574A1
Physics

ADAPTIVE WORD LINE UNDERDRIVE CONTROL FOR AN IN-MEMORY COMPUTE OPERATION WHERE SIMULTANEOUS ACCESS IS MADE TO PLURAL ROWS OF A STATIC RANDOM ACCESS MEMORY (SRAM)

#8 | 2025-05-29
US20250174269A1
Physics

SELECTIVE BIT LINE CLAMPING CONTROL FOR AN IN-MEMORY COMPUTE OPERATION WHERE SIMULTANEOUS ACCESS IS MADE TO PLURAL ROWS OF A STATIC RANDOM ACCESS MEMORY (SRAM)

#9 | 2025-03-06
US20250078883A1
Physics

BIT-CELL ARCHITECTURE BASED IN-MEMORY COMPUTE

#10 | 2025-02-27
US20250069678A1
Physics

BUILT-IN SELF TEST CIRCUIT FOR SEGMENTED STATIC RANDOM ACCESS MEMORY (SRAM) ARRAY INPUT/OUTPUT

#11 | 2025-02-13
US20250054529A1
Physics

SRAM WITH FAST, CONTROLLED PEAK CURRENT, POWER EFFICIENT ARRAY RESET, AND DATA CORRUPTION MODES FOR SECURE APPLICATIONS

#12 | 2025-02-13
US20250054528A1
Physics

SRAM WITH FAST, CONTROLLED PEAK CURRENT, POWER EFFICIENT ARRAY RESET, AND DATA CORRUPTION MODES FOR SECURE APPLICATIONS

#13 | 2024-11-28
US20240395319A1
Physics

SERIAL WORD LINE ACTUATION WITH LINKED SOURCE VOLTAGE SUPPLY MODULATION FOR AN IN-MEMORY COMPUTE OPERATION WHERE SIMULTANEOUS ACCESS IS MADE TO PLURAL ROWS OF A STATIC RANDOM ACCESS MEMORY (SRAM)

#14 | 2024-05-30
US20240177769A1
Physics

BIT LINE ACCUMULATION READOUT SCHEME FOR AN ANALOG IN-MEMORY COMPUTATION PROCESSING CIRCUIT

#15 | 2024-05-02
US20240143239A1
Physics

TUNING OF READ/WRITE CYCLE TIME DELAY FOR A MEMORY CIRCUIT DEPENDENT ON OPERATIONAL MODE SELECTION

#16 | 2024-04-04
US20240112748A1
Physics

AT-SPEED TRANSITION FAULT TESTING FOR A MULTI-PORT AND MULTI-CLOCK MEMORY

#17 | 2024-04-04
US20240112728A1
Physics

ANALOG IN-MEMORY COMPUTATION PROCESSING CIRCUIT USING SEGMENTED MEMORY ARCHITECTURE

#18 | 2024-02-29
US20240071546A1
Physics

Built-in self test circuit for segmented static random access memory (SRAM) array input/output

#19 | 2024-02-29
US20240071439A1
Physics

MEMORY ARCHITECTURE SUPPORTING BOTH CONVENTIONAL MEMORY ACCESS MODE AND DIGITAL IN-MEMORY COMPUTATION PROCESSING MODE

#20 | 2024-02-29
US20240071429A1
Physics

MEMORY ARCHITECTURE SUPPORTING BOTH CONVENTIONAL MEMORY ACCESS MODE AND DIGITAL IN-MEMORY COMPUTATION PROCESSING MODE

#21 | 2024-02-29
US20240069096A1
Physics

BUILT-IN SELF TEST CIRCUIT FOR SEGMENTED STATIC RANDOM ACCESS MEMORY (SRAM) ARRAY INPUT/OUTPUT

#22 | 2024-01-11
US20240015945A1
Electricity

SILICON-ON-INSULATOR SEMICONDUCTOR DEVICE WITH A STATIC RANDOM ACCESS MEMORY CIRCUIT

#23 | 2023-12-21
US20230410892A1
Physics

BIT LINE READ CURRENT MIRRORING CIRCUIT FOR AN IN-MEMORY COMPUTE OPERATION WHERE SIMULTANEOUS ACCESS IS MADE TO PLURAL ROWS OF A STATIC RANDOM ACCESS MEMORY (SRAM)

#24 | 2023-12-21
US20230410862A1
Physics

IN-MEMORY COMPUTATION CIRCUIT USING STATIC RANDOM ACCESS MEMORY (SRAM) ARRAY SEGMENTATION

#25 | 2023-11-30
US20230386566A1
Physics

BIT LINE VOLTAGE CLAMPING READ CIRCUIT FOR AN IN-MEMORY COMPUTE OPERATION WHERE SIMULTANEOUS ACCESS IS MADE TO PLURAL ROWS OF A STATIC RANDOM ACCESS MEMORY (SRAM)

#26 | 2023-11-30
US20230386565A1
Physics

IN-MEMORY COMPUTATION CIRCUIT USING STATIC RANDOM ACCESS MEMORY (SRAM) ARRAY SEGMENTATION AND LOCAL COMPUTE TILE READ BASED ON WEIGHTED CURRENT

#27 | 2023-11-30
US20230386564A1
Physics

ENHANCED ACCURACY OF BIT LINE READING FOR AN IN-MEMORY COMPUTE OPERATION BY ACCOUNTING FOR VARIATION IN READ CURRENT

#28 | 2023-11-02
US20230350483A1
Physics

Computing system power management device, system and method

#29 | 2023-03-30
US20230102492A1
Physics

Bit-cell architecture based in-memory compute

#30 | 2023-02-16
US20230051672A1
Physics

Modular memory architecture with gated sub-array operation dependent on stored data content

#31 | 2023-01-19
US20230018420A1
Physics

SRAM with fast, controlled peak current, power efficient array reset, and data corruption modes for secure applications

#32 | 2023-01-19
US20230012567A1
Physics

Adaptive body bias management for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)

#33 | 2023-01-12
US20230012303A1
Physics

Selective bit line clamping control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)

#34 | 2023-01-12
US20230009329A1
Physics

Adaptive bit line overdrive control for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)

#35 | 2023-01-12
US20230008833A1
Physics

Serial word line actuation with linked source voltage supply modulation for an in-memory compute operation where simultaneous access is made to plural rows of a static random access memory (SRAM)

#36 | 2023-01-12
US20230008275A1
Physics

ADAPTIVE WORD LINE UNDERDRIVE CONTROL FOR AN IN-MEMORY COMPUTE OPERATION WHERE SIMULTANEOUS ACCESS IS MADE TO PLURAL ROWS OF A STATIC RANDOM ACCESS MEMORY (SRAM)

#37 | 2021-06-17
US20210181828A1
Physics

Computing system power management device, system and method

InventorID:

5110049 ⎘