Hsinchu
Taiwan
36
2026-05-21
The entities that hold a legal rights for patent applications filed by inventor Wang Chenchen Jacob:
Chenchen Jacob Wang from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:
SYSTEM-ON-CHIP WITH FERROELECTRIC RANDOM ACCESS MEMORY AND TUNABLE CAPACITOR
#2 | 2025-10-09MEMORY DEVICE AND METHOD OF FORMING THE SAME
#3 | 2025-10-09THREE-DIMENSIONAL MEMORY
#4 | 2025-07-17Memory Device and Methods of Forming Same
#5 | 2025-05-08SYSTEM-ON-CHIP WITH FERROELECTRIC RANDOM ACCESS MEMORY AND TUNABLE CAPACITOR
#6 | 2024-10-31Three-Dimensional Memory Device with Ferroelectric Material
#7 | 2024-09-26MAGNETIC DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
#8 | 2024-08-15Memory Array Word Line Routing
#9 | 2024-05-23METHOD FOR FABRICATING THREE-DIMENSIONAL MEMORY
#10 | 2024-03-21Memory device, and integrated circuit device
#11 | 2024-03-14Multi-level magnetic tunnel junction nor device with wrap-around gate electrodes and methods for forming the same
#12 | 2023-11-30Memory device and methods of forming same
#13 | 2023-10-26Device structure including field effect transistors and ferroelectric capacitors
#14 | 2023-05-25MEMORY DEVICE AND METHOD OF FORMING THE SAME
#15 | 2023-05-18Memory device, integrated circuit device and method
#16 | 2022-12-01Three-dimensional memory device with ferroelectric material
#17 | 2022-11-10Three-dimensional memory
#18 | 2022-11-10System-on-chip with ferroelectric random access memory and tunable capacitor
#19 | 2022-11-03BACKSIDE MEMORY INTEGRATION
#20 | 2022-11-03Semiconductor memory structure and method for forming the same
#21 | 2022-10-27Memory device and methods of forming same
#22 | 2022-10-13Magnetic device structure and methods of forming the same
#23 | 2022-09-29Memory array word line routing
#24 | 2022-09-01Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the same
#25 | 2022-01-27Structures for testing nanoscale devices including ferroelectric capacitors and methods for forming the same
#26 | 2022-01-13Three-dimensional memory and fabricating method thereof
#27 | 2021-12-30Semiconductor structure and method for manufacturing thereof
#28 | 2021-12-23Memory device, integrated circuit device and method
#29 | 2021-12-23Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the same
#30 | 2021-12-23Memory array word line routing
#31 | 2021-12-02Three-dimensional memory device with ferroelectric material
#32 | 2021-11-25Semiconductor device and manufacturing method thereof
#33 | 2021-10-21Structures for testing nanoscale devices including ferroelectric capacitors and methods for forming the same
#34 | 2021-08-05Semiconductor memory structure and device
#35 | 2021-08-05Semiconductor structure and manufacturing method thereof
#36 | 2021-07-01System-on-chip with ferroelectric random access memory and tunable capacitor
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