Warwick, New York
United States
17
2024-06-20
The entities that hold a legal rights for patent applications filed by inventor Strane Jay William:
Jay William Strane from Warwick, US has applied for patents for these inventions. The list has both pending applications and granted patents:
STACKED TRANSISTORS WITH STEPPED CONTACTS
#2 | 2024-06-06LATCH CROSS COUPLE FOR STACKED AND STEPPED FET
#3 | 2024-05-30SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS
#4 | 2024-05-16SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACKED FET
#5 | 2024-03-07VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT
#6 | 2024-02-29STACKED FET SUBSTRATE CONTACT
#7 | 2024-01-11SELF-ALIGNED BOTTOM SPACER
#8 | 2023-12-07Stacked field-effect transistors
#9 | 2023-12-07TOP CONTACT STRUCTURES FOR STACKED TRANSISTORS
#10 | 2023-05-18CMOS top source/drain region doping and epitaxial growth for a vertical field effect transistor
#11 | 2023-05-04Late Gate Extension
#12 | 2023-03-02Self-aligned C-shaped vertical field effect transistor
#13 | 2022-05-12Self-aligned uniform bottom spacers for VTFETS
#14 | 2022-02-24Vertical field effect transistor with bottom spacer
#15 | 2021-10-14Self-aligned uniform bottom spacers for VTFETS
#16 | 2021-09-30CMOS top source/drain region doping and epitaxial growth for a vertical field effect transistor
#17 | 2021-07-15Vertical field effect transistor with bottom spacer
5137974 ⎘