Inventor profile of:

Pengfei Cai

City:

Beijing

Country:

China

Published Applications:

29

Last publication date:

2025-06-17

Top Assignees for applications by Pengfei Cai

The entities that hold a legal rights for patent applications filed by inventor Cai Pengfei:

Recent patent applications by Cai Pengfei

Pengfei Cai from Beijing, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-06-17
US18794785
Electricity

Coherent light receiving optical device

#2 | 2024-05-16
US20240159904A1
Physics

LIDAR AND RANGING METHOD USING SAME

#3 | 2024-05-09
US20240151899A1
Physics

SILICON-BASED INTEGRATED OPTICAL CHIP INTEGRATING SILICON-BASED OPTICAL MODULATOR AND GERMANIUM-SILICON DETECTOR AND PREPARATION METHOD THEREFOR

#4 | 2024-05-09
US20240151831A1
Physics

DUAL-POLARIZED LIGHT DETECTION AND RANGING RECEIVING END BASED ON OPTICAL CHIP

#5 | 2023-10-05
US20230314209A1
Physics

PHOTODIODE STRUCTURE WITH DARK CURRENT INDICATION FUNCTION AND PHOTOELECTRIC SENSOR

#6 | 2023-07-27
US20230238403A1
Electricity

NORMAL-INCIDENT PHOTODIODE STRUCTURE WITH DARK CURRENT SELF-COMPENSATION FUNCTION

#7 | 2022-01-06
US20220005961A1
Electricity

Photoelectric Detector And Method of Making The Same

#8 | 2021-11-18
US20210359763A1
Electricity

Monolithic integrated coherent transceiver

#9 | 2021-09-16
US20210286202A1
Physics

Coplanar waveguide transmission line and silicon-based electro-optic modulator comprising the same

#10 | 2020-10-08
US20200322057A1
Electricity

Monolithic integrated coherent transceiver

#11 | 2020-03-05
US20200073197A1
Physics

Monolithic electro-optical modulator having RCBC electrode structure

#12 | 2019-10-03
US20190302487A1
Physics

Monolithic electro-optical modulator having suspended structure

#13 | 2018-06-28
US20180180805A1
Physics

Fully integrated avalanche photodiode receiver

#14 | 2017-09-21
US20170271545A1
Electricity

Compensated photonic device structure and fabrication method thereof

#15 | 2017-09-21
US20170271543A1
Electricity

Compensated photonic device structure and fabrication method thereof

#16 | 2016-06-16
US20160172525A1
Electricity

High-speed germanium on silicon avalanche photodiode

#17 | 2016-06-02
US20160155883A1
Electricity

Ge/Si avalanche photodiode with integrated heater and fabrication method thereof

#18 | 2015-08-27
US20150243800A1
Electricity

Ge/Si avalanche photodiode with integrated heater and fabrication thereof

#19 | 2015-08-20
US20150236478A1
Electricity

Photonic device structure and fabrication method thereof

#20 | 2015-01-29
US20150028443A1
Electricity

Ge—Si avalanche photodiode with silicon carrier-energy-relaxation layer and edge electric field buffer region

#21 | 2015-01-29
US20150028386A1
Electricity

Ge—Si P-I-N photodiode with reduced dark current and fabrication method thereof

#22 | 2015-01-08
US20150008433A1
Electricity

Compensated photonic device structure and fabrication method thereof

#23 | 2014-10-02
US20140291682A1
Electricity

High performance GeSi avalanche photodiode operating beyond Ge bandgap limits

#24 | 2014-08-28
US20140241658A1
Physics

Electro-optic silicon modulator with longitudinally nonuniform modulation

#25 | 2014-08-28
US20140239301A1
Electricity

High performance surface illuminating GeSi photodiodes

#26 | 2014-07-03
US20140186991A1
Electricity

Avalanche photodiode with special lateral doping concentration

#27 | 2013-11-07
US20130294766A1
Electricity

Dark Current Cancellation For Optical Power Monitoring In Optical Transceivers

#28 | 2013-11-07
US20130292741A1
Electricity

High performance GeSi avalanche photodiode operating beyond Ge bandgap limits

#29 | 2012-12-27
US20120326259A1
Electricity

Avalanche photodiode with special lateral doping concentration

InventorID:

514971 ⎘