Richardson, Texas
United States
11
2014-01-09
The entities that hold a legal rights for patent applications filed by inventor MCKEE Benjamin P.:
Benjamin P. MCKEE from Richardson, US has applied for patents for these inventions. The list has both pending applications and granted patents:
POLYCRYSTALLINE SILICON EFUSE AND RESISTOR FABRICATION IN A METAL REPLACEMENT GATE PROCESS
#2 | 2013-11-07Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
#3 | 2011-05-12Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
#4 | 2009-06-25Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
#5 | 2007-03-08INTEGRATED CIRCUIT CONTAINING POLYSILICON GATE TRANSISTORS AND FULLY SILICIDIZED METAL GATE TRANSISTORS
#6 | 2007-02-22Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors
#7 | 2006-11-30Methods for transistor formation using selective gate implantation
#8 | 2006-11-30Methods for Transistor Formation Using Selective Gate Implantation
#9 | 2006-09-07Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors
#10 | 2006-08-29Methods for transistors formation using selective gate implantation
#11 | 2005-03-24High capacitive density stacked decoupling capacitor structure
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