Kai-Chieh YANG

City:

Hsinchu

Country:

Taiwan

Published Applications:

Last publication date:

2026-04-23

Top Assignees for applications by Kai-Chieh YANG

The entities that hold a legal rights for patent applications filed by inventor YANG Kai-Chieh:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 2 Hsinchu, Taiwan
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 2 Hsinchu, Taiwan

Recent patent applications by YANG Kai-Chieh

Kai-Chieh YANG from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-04-23

US20260114037A1

Electricity

Gate Engineering for Stacked Device Structures

#2 | 2026-04-09

US20260101541A1

Electricity

METHOD AND DEVICE FOR BOOSTING PERFORMANCE OF FINFETS VIA STRAINED SPACER

#3 | 2025-11-20

US20250359280A1

Electricity

BOTTOM-UP METAL GATE FOR STACKED DEVICE STRUCTURE

#4 | 2025-07-24

US20250236776A1

Chemistry; metallurgy

HEAT DISSIPATION COMPONENT WITH ANISOTROPIC HEAT CONDUCTION AND METHOD OF FABRICATING THE SAME AND SEMICONDUCTOR DEVICE

#5 | 2025-05-08

US20250151367A1

Electricity

BOTTOM-UP METAL GATE FOR STACKED DEVICE STRUCTURE

#6 | 2024-11-14

US20240379849A1

Electricity

METHOD AND DEVICE FOR BOOSTING PERFORMANCE OF FINFETS VIA STRAINED SPACER

#7 | 2024-11-07

US20240371940A1

Electricity

SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE

#8 | 2023-09-21

US20230299200A1

Electricity

Method and device for boosting performance of FinFETs via strained spacer

#9 | 2021-07-29

US20210234003A1

Electricity

Method of dopant deactivation underneath gate

InventorID:

5150052 ⎘