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Inventor profile of:

Edward-Yi Chang

City:

Hsinchu

Country:

Taiwan

Published Applications:

Last publication date:

2023-05-11

Top Assignees for applications by Edward-Yi Chang

The entities that hold a legal rights for patent applications filed by inventor Chang Edward-Yi:

National Chiao Tung University 19 Hsinchu, Taiwan
NATIONAL CHIAO TUNG UNIVERSITY 2 HSINCHU CITY, Taiwan
National Yang Ming Chiao Tung University 1 Hsinchu, Taiwan

Recent patent applications by Chang Edward-Yi

Edward-Yi Chang from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-05-11

US20230143658A1

Electricity

Power module

#2 | 2023-03-23

US20230093515A1

Electricity

SYNCHRONOUS BUCK CONVERTER USING A SINGLE GATE DRIVE CONTROL

#3 | 2015-05-14

US20150128930A1

Mechanical engineering

SUN TRACKING MECHANISM

#4 | 2013-11-21

US20130306829A1

Mechanical engineering

Sun-chasing device

#5 | 2013-11-14

US20130300322A1

Performing operations; transporting

EMBEDDED INDUSTRIAL CONTROLLER WITH BICYCLE FRAME SHAPE

#6 | 2013-09-19

US20130241603A1

Electricity

Current limit circuit apparatus

#7 | 2013-09-19

US20130241601A1

Electricity

High-side driver circuit

#8 | 2012-11-29

US20120298991A1

Electricity

Multilayer substrate having gallium nitride layer and method for forming the same

#9 | 2012-09-20

US20120238064A1

Electricity

ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF

#10 | 2012-04-26

US20120097968A1

Electricity

Multilayer substrate having gallium nitride layer and method for forming the same

#11 | 2012-02-02

US20120025270A1

Electricity

ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF

#12 | 2011-10-06

US20110239932A1

Chemistry; metallurgy

Method for reducing defects in epitaxially grown on the group III-nitride materials

#13 | 2011-08-04

US20110186974A1

Electricity

High frequency flip chip package structure of polymer substrate

#14 | 2011-06-30

US20110156100A1

Electricity

High electron mobility transistor and method for fabricating the same

#15 | 2011-05-26

US20110121923A1

Electricity

Vertical transmission line structure that includes bump elements for flip-chip mounting

#16 | 2011-04-21

US20110089467A1

Electricity

OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

#17 | 2010-09-30

US20100248430A1

Electricity

High frequency flip chip package process of polymer substrate and structure thereof

#18 | 2010-05-27

US20100129956A1

Electricity

Method for forming a GexSi1-x buffer layer of solar-energy battery on a silicon wafer

#19 | 2009-10-29

US20090267201A1

Electricity

Vertical transmission line structure that includes bump elements for flip-chip mounting

#20 | 2008-10-16

US20080254632A1

Electricity

Method for forming a semiconductor structure having nanometer line-width

#21 | 2007-07-12

US20070158844A1

Electricity

Copper metalized ohmic contact electrode of compound device

#22 | 2007-02-22

US20070040274A1

Electricity

Interconnect of group III-V semiconductor device and fabrication method for making the same

#23 | 2006-12-28

US20060292785A1

Electricity

Cu-metalized compound semiconductor device

InventorID:

525936 ⎘