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Inventor profile of:

Yiming ZHU

City:

Hefei

Country:

China

Published Applications:

12

Last publication date:

2024-02-08

Top Assignees for applications by Yiming ZHU

The entities that hold a legal rights for patent applications filed by inventor ZHU Yiming:

CHANGXIN MEMORY TECHNOLOGIES, INC. 12 Hefei, China
CHANGXIN MEMORY TECHNOLOGIES, INC. 2 Hefei City, Anhui Province, China
CHANGXIN MEMORY TECHNOLOGIES, INC. 2 Hefei City, China

Recent patent applications by ZHU Yiming

Yiming ZHU from Hefei, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-02-08

US20240049457A1

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

#2 | 2023-04-20

US20230120791A1

Semiconductor device and a method making the same

#3 | 2022-10-06

US20220320107A1

Semiconductor structure and method for forming the same, and memory and method for forming the same

#4 | 2022-09-29

US20220310625A1

Semiconductor structure and method of forming the same, memory and method of forming the same

#5 | 2022-06-30

US20220208855A1

Semiconductor structure and forming method thereof

#6 | 2022-06-30

US20220208854A1

Semiconductor structure and formation method thereof

#7 | 2022-06-30

US20220208611A1

Semiconductor structure and forming method thereof

#8 | 2022-05-05

US20220139431A1

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME, AND MEMORY AND METHOD FOR FORMING SAME

#9 | 2021-12-16

US20210391332A1

Semiconductor structure, method for forming semiconductor structure and memory

#10 | 2021-12-16

US20210391330A1

Method for forming semiconductor structure by using sacrificial layer configured to be replaced subsequently to form bit line, semiconductor structure, and memory

#11 | 2021-12-09

US20210384067A1

Semiconductor manufacturing method

#12 | 2021-12-02

US20210375939A1

Semiconductor structure and forming method therefor, and memory and forming method therefor

InventorID:

5259606 ⎘