Tse-An Chen

SEMICONDUCTOR DEVICE

Semiconductor structure of stacked two-dimensional material layers

Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubes

Semiconductor device with gate dielectric formed using selective deposition

SEMICONDUCTOR DEVICE WITH TWO-DIMENSIONAL MATERIALS

Semiconductor device and manufacturing method thereof

Manufacturing method of semiconductor device including hBNC layer, and manufacturing method of HBNC layer

Semiconductor structure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers

Semiconductor device and manufacturing method thereof

Fin field-effect transistor device with low-dimensional material and method

Method of manufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrode

Semiconductor device with gate dielectric formed using selective deposition

Semiconductor device

Fin field-effect transistor device with low-dimensional material and method

Semiconductor device with two-dimensional materials

Semiconductor devices and methods of manufacture

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Low dimensional material device and method

Field effect transistor and method of manufacturing the same

Single-crystal hexagonal boron nitride layer and method forming same

Semiconductor device and manufacturing method thereof