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Inventor profile of:

Bin Lu

City:

Fremont, California

Country:

United States

Published Applications:

8

Last publication date:

2025-10-02

Top Assignees for applications by Bin Lu

The entities that hold a legal rights for patent applications filed by inventor Lu Bin:

  • Finwave Semiconductor, Inc. 1 Belmont, MA United States

Recent patent applications by Lu Bin

Bin Lu from Fremont, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-10-02
US20250309896A1
Electricity

High Pull-up Slew Rate and Low Quiescent Power for Gate Driver and Logic Elements

#2 | 2025-09-25
US20250301687A1
Electricity

III-Nitride Semiconductor Devices with Reduced Effective Size

#3 | 2025-08-21
US20250267901A1
Electricity

SEMICONDUCTOR STRUCTURE WITH PATTERNED DIELECTRIC LAYER BENEATH FIELD PLATES

#4 | 2025-05-15
US20250159960A1
Electricity

III-NITRIDE TRANSISTOR WITH HIGH N DOPING IN ACCESS REGION

#5 | 2025-03-20
US20250098274A1
Electricity

III-NITRIDE TRANSISTOR WITH TOP AND BOTTOM CAP LAYERS WITH ETCH STOP

#6 | 2023-02-09
US20230043810A1
Electricity

III-NITRIDE TRANSISTOR WITH ELECTRICALLY CONNECTED P-TYPE LAYER IN ACCESS REGION

#7 | 2022-07-07
US20220216304A1
Electricity

III-NITRIDE TRANSISTOR WITH NON-UNIFORM CHANNEL REGIONS

#8 | 2021-12-23
US20210399145A1
Electricity

III-nitride diode with a modified access region

InventorID:

5278580 ⎘

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