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Inventor profile of:

Kwan-Woo DO

City:

Icheon-si

Country:

South Korea

Published Applications:

Last publication date:

2016-06-23

Top Assignees for applications by Kwan-Woo DO

The entities that hold a legal rights for patent applications filed by inventor DO Kwan-Woo:

HYNIX SEMICONDUCTOR INC. 6 Icheon-si, South Korea
SK HYNIX INC. 5 Icheon-si, South Korea
HYNIX SEMICONDUCTOR INC. 3 Icheon-si Gyeonggi-do, South Korea

Recent patent applications by DO Kwan-Woo

Kwan-Woo DO from Icheon-si, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2016-06-23

US20160181204A1

Electricity

Electronic device and method for fabricating the same

#2 | 2016-04-21

US20160111472A1

Electricity

Electronic device and method for fabricating the same

#3 | 2016-03-17

US20160079524A1

Electricity

Electronic device and method for fabricating the same

#4 | 2015-09-03

US20150249110A1

Electricity

Electronic device and method for fabricating the same

#5 | 2014-09-18

US20140269039A1

Physics

ELECTRONIC DEVICE AND VARIABLE RESISTANCE ELEMENT

#6 | 2013-01-24

US20130022744A1

Electricity

METHOD OF FORMING NOBLE METAL LAYER USING OZONE REACTION GAS

#7 | 2012-06-14

US20120147519A1

Chemistry; metallurgy

ELECTRODE IN SEMICONDUCTOR DEVICE, CAPACITOR AND METHOD OF FABRICATING THE SAME

#8 | 2010-02-25

US20100046138A1

Chemistry; metallurgy

Method of fabricating capacitor

#9 | 2010-01-21

US20100012989A1

Electricity

Semiconductor device and method of fabricating the same

#10 | 2009-10-22

US20090263967A1

Electricity

Method of forming noble metal layer using ozone reaction gas

#11 | 2009-10-22

US20090261454A1

Electricity

Method of fabricating capacitor in semiconductor device

InventorID:

52806 ⎘