Inventor profile of:

Chun-Jun Lin

City:

Hsinchu

Country:

Taiwan

Published Applications:

15

Last publication date:

2026-04-23

Top Assignees for applications by Chun-Jun Lin

The entities that hold a legal rights for patent applications filed by inventor Lin Chun-Jun:

Recent patent applications by Lin Chun-Jun

Chun-Jun Lin from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-04-23
US20260113967A1
Electricity

SEMICONDUCTOR DEVICE INCLUDING ISOLATION STRUCTURE WITH CONVEX TOP SURFACE AND METHOD FOR MANUFACTURING THE SAME

#2 | 2026-01-08
US20260013218A1
Electricity

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

#3 | 2024-09-19
US20240313072A1
Electricity

ISOLATION STRUCTURE FOR ISOLATING EPITAXIALLY GROWN SOURCE/DRAIN REGIONS AND METHOD OF FABRICATION THEREOF

#4 | 2024-02-22
US20240063294A1
Electricity

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

#5 | 2024-01-11
US20240014074A1
Electricity

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

#6 | 2024-01-04
US20240006414A1
Electricity

SEMICONDUCTOR DEVICE HAVING DIFFERENT SOURCE/DRAIN JUNCTION DEPTHS AND FABRICATION METHOD THEREOF

#7 | 2023-11-30
US20230386935A1
Electricity

Semiconductor device structure with source/drain structure and method for forming the same

#8 | 2023-11-09
US20230361124A1
Electricity

Isolation structure for preventing unintentional merging of epitaxially grown source/drain

#9 | 2023-10-12
US20230326999A1
Electricity

Semiconductor device structure and method for forming the same

#10 | 2023-01-12
US20230009852A1
Electricity

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

#11 | 2022-09-15
US20220293752A1
Electricity

Isolation structure for isolating epitaxially grown source/drain regions and method of fabrication thereof

#12 | 2022-08-04
US20220246613A1
Electricity

Isolation structure for preventing unintentional merging of epitaxially grown source/drain

#13 | 2022-03-31
US20220102509A1
Electricity

Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof

#14 | 2021-12-30
US20210408000A1
Electricity

Isolation structure for preventing unintentional merging of epitaxially grown source/drain

#15 | 2005-10-04
US10215143
-

Method for fabricating an integrated nozzle plate and multi-level micro-fluidic devices fabricated

InventorID:

5285456 ⎘