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Inventor profile of:

Gary Chen

City:

Boise, Idaho

Country:

United States

Published Applications:

8

Last publication date:

2013-11-14

Top Assignees for applications by Gary Chen

The entities that hold a legal rights for patent applications filed by inventor Chen Gary:

  • Micron Technology, Inc. 4 Boise, ID United States
  • Semiconductor Manufacturing International (Shanghai) Corporation 3 Shanghai, China
  • Semiconductor Manufacturing International (Beijing) Corporation 1 Beijing, China

Recent patent applications by Chen Gary

Gary Chen from Boise, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-11-14
US20130302951A1
Electricity

Surrounding stacked gate multi-gate FET structure nonvolatile memory device

#2 | 2010-04-08
US20100087040A1
Electricity

Method for making split dual gate field effect transistor

#3 | 2007-12-13
US20070287246A1
Electricity

Method for making split dual gate field effect transistor

#4 | 2007-05-01
US10369273
-

Manufacture and cleaning of a semiconductor

#5 | 2006-11-02
US20060244026A1
Electricity

SEMICONDUCTOR SUBSTRATE CLEANING

#6 | 2005-08-23
US10614538
-

Semiconductor structure with substantially etched oxynitride defects protruding therefrom

#7 | 2005-05-10
US10423210
-

Low k film application for interlevel dielectric and method of cleaning etched features

#8 | 2005-02-03
US20050023684A1
Electricity

Semiconductor substrate cleaning

InventorID:

529333 ⎘

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