Hsinchu
Taiwan
19
2025-11-27
The entities that hold a legal rights for patent applications filed by inventor Wang Wei-Cheng:
Wei-Cheng Wang from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:
METAL CAPS FOR GATE STRUCTURES
#2 | 2025-11-13FORMING SILICON-CONTAINING MATERIAL OVER METAL GATE TO REDUCE LOADING BETWEEN LONG CHANNEL AND SHORT CHANNEL TRANSISTORS
#3 | 2025-10-30METHOD OF FORMING METAL GATE FIN ELECTRODE STRUCTURE BY ETCHING BACK METAL FILL
#4 | 2025-10-02FORMING LOW-RESISTANCE CAPPING LAYER OVER METAL GATE ELECTRODE
#5 | 2024-11-14GATE STRUCTURE FOR SEMICONDUCTOR DEVICE
#6 | 2024-11-14Forming Low-Resistance Capping Layer Over Metal Gate Electrode
#7 | 2023-10-05GATE STRUCTURES FOR MULTI-GATE DEVICES
#8 | 2023-08-31Multi-access edge computing (MEC) system, MEC device, user equipment and user plane function (UPF) switch method
#9 | 2023-07-06Metal gate cap
#10 | 2023-05-18Method of forming metal gate fin electrode structure by etching back metal fill
#11 | 2023-05-11Semiconductor device and method
#12 | 2023-01-26Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors
#13 | 2023-01-12Forming Low-Resistance Capping Layer Over Metal Gate Electrode
#14 | 2023-01-12METAL CAPS FOR GATE STRUCTURES
#15 | 2022-09-08Forming low-resistance capping layer over metal gate electrode
#16 | 2022-09-01Metal gate cap
#17 | 2022-04-21Semiconductor device and method
#18 | 2020-09-08Network communication control method of multiple edge clouds and edge computing system
#19 | 2019-10-24Communication system and communication method
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