Hsinchu
Taiwan
6
2025-11-20
The entities that hold a legal rights for patent applications filed by inventor WU Cheng-Ta:
Cheng-Ta WU from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:
RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TRAPPING LAYER AND METHODS OF MANUFACTURING THE SAME
#2 | 2025-09-11FLAT STI SURFACE FOR GATE OXIDE UNIFORMITY IN FIN FET DEVICES
#3 | 2024-08-15RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TRAPPING LAYER AND METHODS OF MANUFACTURING THE SAME
#4 | 2022-05-26Strained gate semiconductor device having an interlayer dielectric doped with large species material
#5 | 2018-10-25Semiconductor device structure having carrier-trapping layers with different grain sizes
#6 | 2018-06-14Charge pump circuit
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