Inventor profile of:

Stefan Dünkel

City:

Dresden

Country:

Germany

Published Applications:

14

Last publication date:

2025-12-11

Top Assignees for applications by Stefan Dünkel

The entities that hold a legal rights for patent applications filed by inventor Dünkel Stefan:

Recent patent applications by Dünkel Stefan

Stefan Dünkel from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-12-11
US20250380425A1
Electricity

BIPOLAR TRANSISTOR WITH FERROELECTRIC MATERIAL

#2 | 2025-09-18
US20250293686A1
Electricity

DEVICE WITH INVERTER FUNCTIONALITY AND TUNABLE TRIGGER VOLTAGE

#3 | 2025-06-17
US18802233
Electricity

IC structure with MFMIS memory cell and CMOS transistor

#4 | 2025-06-12
US20250194098A1
Electricity

STRUCTURE WITH FERROELECTRIC MEMORY STACKS HAVING DIFFERENT SWITCHING VOLTAGES AND RELATED METHODS

#5 | 2024-10-03
US20240332417A1
Electricity

SEMICONDUCTOR DEVICE INCLUDING GATE WITH DIFFERENT LATERALLY ADJACENT SECTIONS AND METHOD

#6 | 2024-07-04
US20240224515A1
Electricity

STRUCTURE WITH BURIED DOPED REGION FOR COUPLING SOURCE LINE CONTACT TO GATE STRUCTURE OF MEMORY CELL

#7 | 2024-04-11
US20240120420A1
Electricity

Ferroelectric field-effect transistors with a hybrid well

#8 | 2024-01-11
US20240014320A1
Electricity

Structures for a ferroelectric field-effect transistor and related methods

#9 | 2023-12-07
US20230395605A1
Electricity

RECONFIGURABLE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD

#10 | 2023-03-02
US20230067884A1
Electricity

Ferroelectric nonvolatile memory device and integration schemes

#11 | 2022-07-14
US20220223740A1
Electricity

Non-volatile memory structure using semiconductor layer as floating gate and bulk semiconductor substrate as channel region

#12 | 2022-07-07
US20220216237A1
Electricity

Reconfigurable complementary metal oxide semiconductor device and method

#13 | 2020-06-04
US20200176456A1
Electricity

Rounded shaped transistors for memory devices

#14 | 2018-12-25
US15676529
Electricity

Ferro-FET device with buried buffer/ferroelectric layer stack

InventorID:

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