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Inventor profile of:

Hao Pu

City:

Wuhan

Country:

China

Published Applications:

7

Last publication date:

2026-05-07

Top Assignees for applications by Hao Pu

The entities that hold a legal rights for patent applications filed by inventor Pu Hao:

  • Yangtze Memory Technologies Co., Ltd. 4 Wuhan, China
  • Yangtze Memory Technlogies Co., Ltd. 1 Wuhan, China

Recent patent applications by Pu Hao

Hao Pu from Wuhan, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-05-07
US20260129857A1
Electricity

METHODS FOR FABRICATING A LAYERED SEMICONDUCTOR STRUCTURE FOR NAND MEMORY DEVICES

#2 | 2025-07-17
US20250234548A1
Electricity

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD FOR ENHANCED RELIABILITY

#3 | 2024-11-14
US20240379787A1
Electricity

SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SYSTEMS

#4 | 2024-02-22
US20240064977A1
Electricity

METHODS FOR FABRICATING A LAYERED SEMICONDUCTOR STRUCTURE FOR NAND MEMORY DEVICES

#5 | 2023-05-04
US20230139782A1
Electricity

Three-dimensional memory device and fabrication method for enhanced reliability

#6 | 2023-05-04
US20230134694A1
Electricity

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF

#7 | 2022-09-29
US20220310643A1
Electricity

Ladder annealing process for increasing polysilicon grain size in semiconductor device

InventorID:

5534258 ⎘

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