Inventor profile of:

Terrence B. McDaniel

City:

Boise, Idaho

Country:

United States

Published Applications:

41

Last publication date:

2026-05-28

Top Assignees for applications by Terrence B. McDaniel

The entities that hold a legal rights for patent applications filed by inventor McDaniel Terrence B.:

Recent patent applications by McDaniel Terrence B.

Terrence B. McDaniel from Boise, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-05-28
US20260150271A1
Electricity

VOLATILE MEMORY DEVICES

#2 | 2025-12-25
US20250391711A1
Electricity

HETEROGENOUS INTEGRATION OF SEMICONDUCTOR STRUCTURES

#3 | 2025-10-30
US20250336854A1
Electricity

PROTRUDED BOND PADS FOR HYBRID BONDING OF SEMICONDUCTOR DEVICES

#4 | 2025-10-30
US20250336772A1
Electricity

SEMICONDUCTOR DEVICES WITH NANO-VIAS, SUCH AS NANO-THROUGH-SILICON VIAS LANDING ON MIDDLE-OF-LINE OR BACK-END-OF-LINE LAYERS

#5 | 2025-10-16
US20250323125A1
Electricity

SEMICONDUCTOR DEVICE WITH BACKSIDE INTERFACE MECHANISM AND METHODS FOR MANUFACTURING THE SAME

#6 | 2025-08-28
US20250275249A1
Electricity

Array Of Vertical Transistors And Method Used In Forming An Array Of Vertical Transistors

#7 | 2024-11-14
US20240379596A1
Electricity

CONDUCTIVE PAD ON A THROUGH-SILICON VIA

#8 | 2024-08-29
US20240292603A1
Electricity

DAMASCENE DIGIT LINES

#9 | 2024-05-09
US20240153541A1
Physics

Integrated Assemblies and Methods Forming Integrated Assemblies

#10 | 2024-03-07
US20240079369A1
Electricity

CONNECTING SEMICONDUCTOR DIES THROUGH TRACES

#11 | 2024-02-29
US20240071989A1
Electricity

SEMICONDUCTOR DEVICE CIRCUITRY FORMED FROM REMOTE RESERVOIRS

#12 | 2024-02-29
US20240071968A1
Electricity

SEMICONDUCTOR DEVICE INTERCONNECTS FORMED THROUGH VOLUMETRIC EXPANSION

#13 | 2024-02-29
US20240071823A1
Electricity

SEMICONDUCTOR DEVICE CIRCUITRY FORMED THROUGH VOLUMETRIC EXPANSION

#14 | 2024-02-22
US20240063207A1
Electricity

METHODS FOR FUSION BONDING SEMICONDUCTOR DEVICES TO TEMPORARY CARRIER WAFERS WITH CAVITY REGIONS FOR REDUCED BOND STRENGTH, AND SEMICONDUCTOR DEVICE ASSEMBLIES FORMED BY THE SAME

#15 | 2024-02-22
US20240063094A1
Electricity

SEMICONDUCTOR DEVICE ASSEMBLIES WITH A CAVITY EXPOSING THROUGH-SILICON VIAS FOR CONTROLLER ATTACHMENT

#16 | 2024-02-22
US20240063068A1
Electricity

SEMICONDUCTOR DEVICE ASSEMBLIES WITH CAVITY-EMBEDDED CUBES AND LOGIC-SUPPORTING INTERPOSERS

#17 | 2024-02-01
US20240040775A1
Electricity

MICROELECTRONIC DEVICES AND ELECTRONIC SYSTEMS

#18 | 2024-02-01
US20240038588A1
Electricity

METHODS OF FORMING THE MICROELECTRONIC DEVICES, AND RELATED MICROELECTONIC DEVICES AND ELECTRONIC SYSTEMS

#19 | 2023-10-26
US20230345708A1
Electricity

Sense line and cell contact for semiconductor devices

#20 | 2023-01-19
US20230014320A1
Electricity

Array Of Vertical Transistors And Method Used In Forming An Array Of Vertical Transistors

#21 | 2023-01-05
US20230005932A1
Electricity

Methods of forming microelectronic devices

#22 | 2022-11-10
US20220358971A1
Physics

Integrated assemblies and methods forming integrated assemblies

#23 | 2022-08-04
US20220246736A1
Electricity

Methods of forming a microelectronic device, and related microelectronic devices, memory devices, and electronic systems

#24 | 2022-03-22
US17307686
Physics

Integrated assemblies and methods forming integrated assemblies

#25 | 2022-02-24
US20220059469A1
Electricity

Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

#26 | 2022-02-03
US20220037334A1
Electricity

Digit line formation for horizontally oriented access devices

#27 | 2022-01-27
US20220028903A1
Electricity

Array of vertical transistors and method used in forming an array of vertical transistors

#28 | 2013-12-05
US20130320502A1
Electricity

Semiconductor processing method and semiconductor structure

#29 | 2010-12-02
US20100304560A1
Electricity

Semiconductor processing methods

#30 | 2009-09-24
US20090236638A1
Electricity

Semiconductor constructions

#31 | 2008-07-10
US20080164566A1
Electricity

Method for forming a buried digit line with self aligning spacing layer and contact plugs during the formation of a semiconductor device, semiconductor devices, and systems including same

#32 | 2008-05-15
US20080113501A1
Electricity

Methods of forming semiconductor constructions

#33 | 2008-05-08
US20080105913A1
Electricity

Semiconductor Structures

#34 | 2007-07-19
US20070164350A1
Electricity

Method and structure for a self-aligned silicided word line and polysilicon plug during the formation of a semiconductor device

#35 | 2007-02-22
US20070040224A1
Electricity

Method for forming a buried digit line with self aligning spacing layer and contact plugs during the formation of a semiconductor device, semiconductor devices, and systems including same

#36 | 2007-01-11
US20070010084A1
Electricity

Semiconductor processing methods

#37 | 2006-12-28
US20060292838A1
Electricity

Ion implanting methods

#38 | 2006-10-12
US20060228880A1
Electricity

Methods of forming semiconductor constructions

#39 | 2006-08-24
US20060189128A1
Electricity

Method of forming a conductive line and a method of forming a conductive contact adjacent to and insulated from a conductive line

#40 | 2006-02-23
US20060040465A1
Electricity

Methods of forming conductive lines

#41 | 2005-01-13
US20050009343A1
Electricity

Method and structure for a self-aligned silicided word line and polysilicon plug during the formation of a semiconductor device

InventorID:

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