Danville, California
United States
67
2026-06-18
The entities that hold a legal rights for patent applications filed by inventor Ge Ning:
Ning Ge from Danville, US has applied for patents for these inventions. The list has both pending applications and granted patents:
CROSSBAR CIRCUITS INCLUDING RRAM DEVICES WITH MINIMIZED WRITE DISTURBANCES
#2 | 2026-06-18MEMRISTOR DEVICES FOR NEUROMORPHIC COMPUTING
#3 | 2026-05-07READ-OUT CIRCUITS FOR RRAM-BASED CROSSBAR CIRCUITS
#4 | 2026-04-30CROSSBAR CIRCUITS INCORPORATING 2-TRANSISTOR-2-RESISTOR CONFIGURATIONS
#5 | 2026-04-09CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICES
#6 | 2026-03-26TUNNELING-BASED SELECTORS INCORPORATING VAN DER WAALS (VDW) MATERIALS
#7 | 2026-03-19RRAM CROSSBAR ARRAY CIRCUITS WITH SPECIALIZED INTERFACE LAYERS FOR LOW CURRENT OPERATION
#8 | 2026-03-19RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH ENGINEERED ELECTRONIC DEFECTS AND METHODS FOR MAKING THE SAME
#9 | 2026-03-12CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA DEVICE STRUCTURE
#10 | 2026-03-12REDUCING DISTURBANCE IN CROSSBAR ARRAY CIRCUITS
#11 | 2026-03-05MEMRISTOR DEVICES FOR NEUROMORPHIC COMPUTING
#12 | 2026-03-05FERROELECTRIC NON-VOLATILE MEMORY DEVICES
#13 | 2026-01-29CODE COMPARATORS WITH NONPOLAR DYNAMICAL SWITCHES
#14 | 2026-01-22LARGE-SCALE CROSSBAR ARRAYS WITH REDUCED SERIES RESISTANCE
#15 | 2026-01-15CROSSBAR CIRCUITS UTILIZING OVONIC THRESHOLD SWITCHING (OTS) MEMORY DEVICES
#16 | 2026-01-08RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH MULTI-COMPONENT ELECTRODES AND DISCONTINUOUS INTERFACE LAYERS
#17 | 2026-01-01SUPPRESSING RANDOM TELEGRAPH NOISE IN CROSSBAR CIRCUITS
#18 | 2025-12-04MECHANISMS FOR PROGRAMMING MULTILEVEL MEMORY DEVICES WITH VARIABLE MEMORY WINDOWS
#19 | 2025-10-09TRANSIMPEDANCE AMPLIFIERS FOR CROSSBAR CIRCUITS
#20 | 2025-08-28DEUTERIUM-TREATED FERROELECTRIC DEVICES AND METHODS FOR FABRICATING THE SAME
#21 | 2025-08-28READ-OUT CIRCUITS FOR RRAM-BASED CROSSBAR CIRCUITS
#22 | 2025-08-07FERROELECTRIC MEMORY DEVICES WITH A THREE-DIMENSIONAL TOPOGRAPHY STRUCTURE
#23 | 2025-07-31CROSSBAR CIRCUITS INCLUDING RRAM DEVICES WITH MINIMIZED WRITE DISTURBANCES
#24 | 2025-07-03INTEGRATED SENSING AND MACHINE LEARNING PROCESSING DEVICES
#25 | 2025-06-19FERROELECTRIC MEMORY DEVICES
#26 | 2025-05-15RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH MULTI-COMPONENT ELECTRODES
#27 | 2025-05-15DEUTERIUM-TREATED RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICES
#28 | 2025-05-08CROSSBAR ARRAY WITH REDUCED DISTURBANCE
#29 | 2025-05-01RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICES WITH DOPED SWITCHING OXIDES
#30 | 2025-04-17RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICES WITH ELECTRODES CONTAINING RUTHENIUM
#31 | 2025-03-20INCREASING SELECTOR SURFACE AREA IN CROSSBAR ARRAY CIRCUITS
#32 | 2025-02-13CROSSBAR CIRCUITS INCLUDING RRAM DEVICES WITH MINIMIZED WRITE DISTURBANCES
#33 | 2025-02-13IMPLEMENTING HARDWARE NEURONS USING TUNNELING DEVICES
#34 | 2025-01-30RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH MULTI-COMPONENT ELECTRODES
#35 | 2025-01-30SUPPRESSING RANDOM TELEGRAPH NOISE IN CROSSBAR CIRCUITS
#36 | 2025-01-30TRANSIMPEDANCE AMPLIFIERS FOR CROSSBAR CIRCUITS
#37 | 2025-01-23LOW CURRENT RRAM-BASED CROSSBAR ARRAY CIRCUITS IMPLEMENTED WITH INTERFACE ENGINEERING TECHNOLOGIES
#38 | 2025-01-23CROSSBAR ARRAY CIRCUIT WITH 3D VERTICAL RRAM
#39 | 2025-01-16FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES
#40 | 2024-12-19RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICES WITH INTERFACE LAYERS
#41 | 2024-10-10CROSSBAR CIRCUITS FOR PERFORMING CONVOLUTION OPERATIONS
#42 | 2024-08-15RRAM CROSSBAR ARRAY CIRCUITS WITH SPECIALIZED INTERFACE LAYERS FOR LOW CURRENT OPERATION
#43 | 2024-07-11SYSTEM-ON-A-CHIP (SOC) INTEGRATION OF RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH VARYING SWITCHING CHARACTERISTICS
#44 | 2024-04-25VOLTAGE DIVIDER CIRCUITS UTILIZING NON-VOLATILE MEMORY DEVICES
#45 | 2024-04-25COMPARATORS AND ANALOG-TO-DIGITAL CONVERTERS USING NON-VOLATILE MEMORY DEVICES
#46 | 2024-04-04CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA DEVICE STRUCTURE
#47 | 2024-03-21Integrated sensing and machine learning processing devices
#48 | 2024-03-21INTEGRATED SENSING AND MACHINE LEARNING PROCESSING DEVICES
#49 | 2024-01-18Forming-free random-access memory (RRAM) devices
#50 | 2023-12-28CMOS-COMPATIBLE RRAM DEVICES
#51 | 2023-12-21RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH COMPOUND NON-REACTIVE ELECTRODES
#52 | 2023-12-21CODE COMPARATORS WITH NONPOLAR DYNAMICAL SWITCHES
#53 | 2023-12-14FERROELECTRIC NON-VOLATILE MEMORY DEVICES
#54 | 2023-11-23TUNNELING-BASED SELECTORS INCORPORATING VAN DER WAALS (VDW) MATERIALS
#55 | 2023-10-19REDUCING DISTURBANCE IN CROSSBAR ARRAY CIRCUITS
#56 | 2023-07-06LOW CURRENT RRAM-BASED CROSSBAR ARRAY CIRCUIT IMPLEMENTED WITH SWITCHING OXIDE ENGINEERING TECHNOLOGIES
#57 | 2023-06-29Crossbar array circuit with parallel grounding lines
#58 | 2023-03-30Crossbar array with reduced disturbance
#59 | 2023-03-23LARGE-SCALE CROSSBAR ARRAYS WITH REDUCED SERIES RESISTANCE
#60 | 2023-03-23Low current RRAM-based crossbar array circuits implemented with interface engineering technologies
#61 | 2023-03-09Increasing selector surface area in crossbar array circuits
#62 | 2022-11-17RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH METAL-NITRIDE COMPOUND ELECTRODES
#63 | 2022-11-17Resistive random-access memory devices with multi-component electrodes
#64 | 2022-11-17Resistive random-access memory devices with multi-component electrodes
#65 | 2022-10-06RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH ENGINEERED ELECTRONIC DEFECTS AND METHODS FOR MAKING THE SAME
#66 | 2022-09-15Auto-calibrating crossbar-based apparatuses
#67 | 2022-06-02Methods for fabricating resistive random-access memory stacks
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