Inventor profile of:

Wei-De HO

City:

Hsinchu

Country:

Taiwan

Published Applications:

29

Last publication date:

2026-07-02

Top Assignees for applications by Wei-De HO

The entities that hold a legal rights for patent applications filed by inventor HO Wei-De:

Recent patent applications by HO Wei-De

Wei-De HO from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-07-02
US20260190953A1
Electricity

ETCH MONITORING AND PERFORMING

#2 | 2026-06-04
US20260156911A1
Electricity

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

#3 | 2026-05-28
US20260150386A1
Electricity

AMORPHIZATION OF SILICON SUBSTRATE BEFORE REMOVAL IN STACKED TRANSISTORS

#4 | 2026-05-14
US20260136641A1
Electricity

FORMING CFETS THROUGH LOW-TEMPERATURE RE-GROWTH

#5 | 2026-04-30
US20260123006A1
Electricity

SELF-ALIGNED BACKSIDE CONTACTS IN CFETS AND THE METHODS OF FORMING THE SAME

#6 | 2026-03-26
US20260090095A1
Electricity

STACKED TRANSISTORS HAVING SOURCE/DRAIN CONTACTS AND GATE STRUCTURES WITH LEVEL TOP SURFACES

#7 | 2026-03-26
US20260090093A1
Electricity

COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING

#8 | 2026-03-19
US20260082688A1
Electricity

BACKSIDE GATE CONTACT AND METHODS OF FORMING THE SAME

#9 | 2025-11-27
US20250366104A1
Electricity

COMPLEMENTARY FIELD EFFECT TRANSISTOR WITH CONDUCTIVE THROUGH SUBSTRATE LAYER

#10 | 2025-11-06
US20250343112A1
Electricity

FRONT SIDE TO BACKSIDE INTERCONNECTION FOR CFET DEVICES

#11 | 2025-10-23
US20250329647A1
Electricity

STACKED TRANSISTORS WITH VERTICAL INTERCONNECT

#12 | 2025-10-16
US20250324701A1
Electricity

BACKSIDE GATE CONTACT, BACKSIDE GATE ETCH STOP LAYER, AND METHODS OF FORMING SAME

#13 | 2025-10-16
US20250323101A1
Electricity

THIN-FILM NON-UNIFORM STRESS EVALUATION

#14 | 2025-10-09
US20250318270A1
Electricity

BACKSIDE GATE CONTACT, BACKSIDE GATE ETCH STOP LAYER, AND METHODS OF FORMING SAME

#15 | 2025-07-17
US20250233070A1
Electricity

STACKED TRANSISTORS WITH VERTICAL INTERCONNECT

#16 | 2025-06-19
US20250204049A1
Electricity

Backside Gate Contact, Backside Gate Etch Stop Layer, and Methods of Forming Same

#17 | 2024-10-15
US18545337
Electricity

Backside gate contact, backside gate etch stop layer, and methods of forming same

#18 | 2024-08-29
US20240290864A1
Electricity

BACKSIDE GATE CONTACT, BACKSIDE GATE ETCH STOP LAYER, AND METHODS OF FORMING SAME

#19 | 2024-08-22
US20240282671A1
Electricity

Front Side to Backside Interconnection for CFET Devices

#20 | 2024-06-27
US20240213195A1
Electricity

SEMICONDUCTOR STRUCTURE WITH HYBRID BONDING AND METHOD FOR MANUFACTURING THE SAME

#21 | 2024-02-29
US20240072115A1
Electricity

COMPLEMENTARY FIELD EFFECT TRANSISTOR WITH CONDUCTIVE THROUGH SUBSTRATE LAYER

#22 | 2023-03-02
US20230067049A1
Electricity

Memory device and manufacturing method thereof

#23 | 2023-03-02
US20230062426A1
Electricity

Etch monitoring and performing

#24 | 2022-12-01
US20220384521A1
Electricity

Alignment mark for MRAM device and method

#25 | 2022-11-10
US20220359313A1
Electricity

THIN-FILM NON-UNIFORM STRESS EVALUATION

#26 | 2021-03-04
US20210066139A1
Electricity

Thin-film non-uniform stress evaluation

#27 | 2017-10-10
US15334912
Electricity

Overlay measurement and compensation in semiconductor fabrication

#28 | 2016-09-22
US20160274455A1
Physics

Two-dimensional process window improvement

#29 | 2016-05-05
US20160124300A1
Physics

Cut-mask patterning process for FIN-like field effect transistor (FINFET) device

InventorID:

5572838 ⎘