Wuhan
China
20
2026-06-04
The entities that hold a legal rights for patent applications filed by inventor Jiang Ning:
Ning Jiang from Wuhan, CN has applied for patents for these inventions. The list has both pending applications and granted patents:
MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND METHOD FOR FORMING THE SAME
#2 | 2026-04-30SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME
#3 | 2025-09-11MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING THE SAME
#4 | 2025-05-15VERTICAL GATE DRAM DEVICE
#5 | 2025-03-06MANAGING VERTICAL STRUCTURES IN THREE-DIMENSIONAL SEMICONDUCTIVE DEVICES
#6 | 2025-02-27MEMORY DEVICES HAVING VERTICAL TRANSISTORS IN PERIPHERAL CIRCUITS
#7 | 2025-02-27MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING THE SAME
#8 | 2024-11-21MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING THE SAME
#9 | 2024-11-14MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND FABRICATING METHODS THEREOF
#10 | 2024-07-113D MEMORY DEVICE WITH A DRAM CHIP
#11 | 2023-11-16MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND FABRICATING METHODS THEREOF
#12 | 2023-08-03SEMICONDUCTOR DEVICES HAVING SHIELDING ELEMENTS
#13 | 2023-08-03SEMICONDUCTOR DEVICES HAVING SHIELDING ELEMENT
#14 | 2023-03-02MEMORY DEVICES HAVING VERTICAL TRANSISTORS AND METHODS FOR FORMING THE SAME
#15 | 2023-03-02Memory devices having vertical transistors and methods for forming the same
#16 | 2023-03-02Memory devices having vertical transistors and methods for forming the same
#17 | 2022-11-17Memory peripheral circuit having three-dimensional transistors and method for forming the same
#18 | 2022-11-17Memory peripheral circuit having three-dimensional transistors and method for forming the same
#19 | 2022-11-17MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND METHOD FOR FORMING THE SAME
#20 | 2022-11-17MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND METHOD FOR FORMING THE SAME
5579152 ⎘